Lg Electronics Inc.

Siltron, Inc.

Sunmi Kim

Hyon-Jong Cho

Dowan Kim

Hong-Woo Lee

Jonghoon Lee

Youngkee Oh

Hongku Ahn

Cheol-Woo Lee

Jin Soo Cheong

Disclosed are a washing machine that performs a washing course by heating wash water and a control method thereof. The method may include selecting a certain washing course from a plurality of washing courses, sensing an amount of laundry received in an inner tub and determining a wash water level required for main washing of the determined amount of laundry, supplying wash water up to a wash water level for generation of steam such that a portion of the laundry is moistened, the wash water level being higher than a bottom surface of the inner tub and lower than the wash water level for main washing, heating the wash water to a first set temperature and driving a wash water heater to generate steam from the wash water, supplying additional wash water up to the wash water level for main washing, and performing a main washing cycle.

Washing machine and method of controlling same

A method of performing a handover between heterogeneous networks and user equipment apparatus for the same are disclosed. The user equipment apparatus includes a first type communication module configured to transceive a signal with a first type base station (BS) using a first wireless communication scheme, a second type communication module configured to transceive a signal with a second type BS using a second wireless communication scheme, and a processor configured to control the handover to be performed on a second type BS operating in an idle state with the second type communication module when a signal is received from a first type BS operating in an active state with the first type communication module, wherein the signal request that the UE performs the handover to the second type BS operating in an idle state with the second type communication module from the first type BS.

Method of performing handover between heterogeneous networks and user equipment apparatus for the same

A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection distribution of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.

Silicon wafer and method for producing silicon single crystal

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Seoul, South Korea

Sunmi Kim