Stats Chippac Pte. Ltd.

SunMi Kim

KyungHoon Lee

OhHan Kim

DaeWook Yang

JoungUn Park

A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die.

Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield

An integrated circuit packaging system, and a method of manufacture thereof, including: a device formed as a die having a conductor with ends exposed on opposite sides of the die; a first surface depression on the device, the first surface depression surrounding one of the ends of the conductor exposed at a stack side of the die; a first component over and connected to the conductor, the first component surrounded by the first surface depression; and a first underfill between and in direct contact with the first component and the device, the first underfill substantially filled to a side of an inner edge and within a perimeter of the first surface depression isolated from the conductor.

Integrated circuit packaging system with underfill and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a device having a conductor with ends exposed on opposite sides of the device; forming a first surface depression on the device around the conductor; connecting a first component over the conductor and surrounded by the first surface depression; and applying a first underfill between the first component and the device, the first underfill substantially filled within a perimeter of the first surface depression.

Integrated circuit packaging system with underfill and methods of manufacture thereof

A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected.

Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures

A shielded semiconductor device is made by embedding a ground shield between layers of a substrate. Semiconductor die are mounted to the substrate over the ground shields. An encapsulant is formed over the semiconductor die and substrate. The encapsulant is diced to form dicing channels between the semiconductor die. A plurality of openings is drilled into the substrate along the dicing channels down through the ground shield on each side of the semiconductor die. A top shield is formed over the semiconductor die. The openings in the substrate are filled with a shielding material to electrically and mechanically connect the top shield to the ground shield. The substrate is singulated to separate the semiconductor die with top shield and ground shield into individual semiconductor devices. IPDs in the semiconductor die generate electromagnetic interference which is blocked by the respective top shield and ground shield.

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Kyoungki-do, South Korea

SunMi Kim