Lg Display Co., Ltd.

SunMan Kim

Youngki Song

Taeil Jung

Byeong-Kyun Choi

Yeji Han

Chunghoon Park

YoungChae Kim

Se-Eun Kang

The present disclosure relates to a light shutter panel and a transparent display apparatus having the same. The light shutter panel according to the present disclosure comprises: a lower electrode plate; an upper electrode plate facing with the lower electrode plate; a shutter layer disposed between the lower electrode plate and the upper electrode plate, and including a maximum light transmitting portion, a minimum light blocking portion, ink storage portions connecting the maximum light transmitting portion and the minimum light blocking portion, and an electric field guide disposed between the ink storage portions; a plurality of spacers maintaining a gap between the lower electrode plate and the upper electrode plate; and black ink filled into the ink storage portion of the shutter layer.

Light shutter panel and transparent display apparatus having the same

The present disclosure relates to a light control film having nano (or nano-scale) light absorbing layer and a display using the same. A light control film according to the present disclosure comprises: a lower layer having a first axis and a second axis; an upper layer facing with the lower layer; a middle layer having a thickness disposed between the lower layer and the upper layer; a plurality of nano light absorbing layers arrayed with a predetermined interval along the first axis in the middle layer, each of the nano light absorbing layer having a width along the first axis, a length along the second axis and a height corresponding to the thickness of the middle layer; and a prism pattern disposed between each pair of the nano light absorbing layers.

Light control film having nano light absorbing layer and display using the same

A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.

Semiconductor light emitting device and method for manufacturing the same

Growing community of inventors

Goyang-si, South Korea

SunMan Kim