Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Sunki Min

Donghyun Roh

Jaekyung Lee

Hyangjin Lee

Seunghyun Heo

Jeean Chang

Kiwoong Lee

Sungsoo Kim

Iksoo Kim

Chaeho Na

Sangkoo Kang

Yongtae Kim

Sangseok Lee

Kiwon Park

Koungmin Ryu

Daegun Park

Je-min Yoo

Yookyoung Choi

Taejoon Kim

Seungshin Lee

Yeongbin Byeon

Changmin Kwak

Songe Kim

In order to assist a voice recognition function when voice recognition has failed, a display device may comprise a display, a user input interface configured to receive a command from a remote control device, and a controller configured to display a keyboard window including one or more queries and a keyboard item on the display when voice recognition for a voice command uttered by a user has failed in a state in which a voice recognition function is activated.

Display device and operating method thereof

A method includes: forming a sacrificial gate structure on the active region; forming a spacer structure including a first spacer, a second spacer, and an air-gap spacer, the air-gap spacer capped by bending an upper portion of the second spacer toward an upper portion of the first spacer; forming an insulating structure on the sides of the spacer structure; forming a gap region; and forming a gate structure including a gate dielectric layer, a gate electrode, and a gate capping layer in the gap region. The upper portion of the second spacer is in physical contact with the upper portion of the first spacer on a contact surface, and a lowermost end of the contact surface is on a level higher than an upper surface of the gate electrode with the substrate being a reference base level.

Method of forming a semiconductor device with capped air-gap spacer

An integrated circuit device includes: a fin-type active region on a substrate and including a fin top surface at a first level; a gate line on the fin-type active region; and an insulating structure on a sidewall of the fin-type active region. The insulating structure includes: a first insulating liner in contact with a sidewall of the fin-type active region; a second insulating liner on the first insulating liner and including an uppermost portion at a second level c than the first level; a lower buried insulating layer facing the sidewall of the fin-type active region and including a first top surface facing the gate line at a third level lower than the second level; and an upper buried insulating layer between the lower buried insulating layer and the gate line and including a second top surface at a fourth level equal to or higher than the second level.

Integrated circuit devices

A display device according to an embodiment of the present invention may comprise: a display unit for displaying a content image; a microphone for receiving voice commands from a user; a network interface unit for communicating with a natural language processing server and a search server; and a control unit for transmitting the received voice commands to the natural language processing server, receiving intention analysis result information indicating the user's intention corresponding to the voice commands from the natural language processing server, and performing a function of the display device according to the received intention analysis result information.

Display device and system comprising same

A method for manufacturing a semiconductor device includes forming a first active fin and a second active fin on a first active region and a second active region of a substrate, respectively, forming a device isolation layer to cover sidewalls of lower portions of the first active fin and the second active fin, forming a first liner layer and a second liner layer to cover upper portions of the first active fin and the second active fin, respectively, forming a first gate electrode and a second gate electrode on the first active fin and the second active fin, respectively, and forming a first source/drain region and a second source/drain region on the first active fin and the second active fin, respectively. The first liner layer includes a different material from a material of the second liner layer.

Semiconductor device

A semiconductor device includes first active patterns and second active patterns on a substrate, a first source/drain region on the first active patterns, a second source/drain region on the second active patterns and a device isolation layer filling a first trench between adjacent ones of the first active patterns and a second trench between adjacent ones of the second active patterns. A liner layer is disposed on the device isolation layer between the adjacent ones of the second active patterns. The device isolation layer between the adjacent ones of the first active patterns has a recess therein under the first source/drain region and a bottom surface of the liner layer between the adjacent ones of the second active patterns is higher than the recess.

A semiconductor device includes a substrate including an active region extending in a first direction; a gate structure intersecting the active region and extending in a second direction on the substrate, the gate structure including a gate electrode, a gate capping layer on the gate electrode, and a plurality of spacers on side surfaces of the gate electrode; source/drain regions on the active region on at least one side of the gate structure; a first insulating layer and a second insulating layer on the source/drain regions on at least one side of the gate structure; and contact plugs on the source/drain regions and penetrating the first and second insulating layers. The plurality of spacers include a first spacer on the side surfaces of the gate electrode, an air-gap spacer on an external side surface of the first spacer, and a second spacer on an external side surface of the air-gap spacer An upper portion of the second spacer is bent towards an upper portion of the first spacer and is configured to cap the air-gap spacer.

A digital device and controlling method thereof are disclosed. The digital device according to an embodiment of the present invention includes a display unit configured to output a content and a controller. The controller is configured to obtain content information of the content being outputted, obtain at least one associated keyword corresponding to the obtained content information, retrieve at least one piece of associated information related to the content using an associated search term containing the obtained at least one associated keyword, and to output the retrieved at least one piece of the associated information.

Digital device and controlling method thereof

A semiconductor device includes a substrate having a first active pattern and a second active pattern, the first active pattern including a first recess region dividing an upper portion thereof into a first portion and a second portion, the second active pattern including a second recess region dividing an upper portion thereof into a first portion and a second portion, a first insulating pattern covering an inner sidewall of the first recess region, and a second insulating pattern covering an inner sidewall of the second recess region. The first insulating pattern and the second insulating pattern include the same insulating material, and a volume fraction of the first insulating pattern with respect to a volume of the first recess region is smaller than a volume fraction of the second insulating pattern with respect to a volume of the second recess region.

Growing community of inventors

Seoul, South Korea

Sunki Min