Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Stats Chippac Pte. Ltd.

Material Science Co., Ltd.

Lg Electronics Inc.

Samsung Display Co., Ltd.

Sunjae Kim

Sunghoon Kim

Tae Wan Lee

Jeonghoe Heo

Seong-Min Park

Dong Hun Lee

Seonkeun Yoo

Seunghee Yoon

JaeHyun Lee

Heejun Park

Soyoung Jang

Inbum Song

JoongGi Kim

Daehyun Kim

Yoojin Choi

Jeongdae Seo

Sunghye Yoon

Hyungtae Jang

Byeongwook Yoo

Myeongsuk Kim

Sunkyoung Seo

Jimyoung Ye

Sunwoo Kang

KyongSoon Cho

Yonghoe Cho

Younhwa Choi

Huran Choi

Illhun Cho

Jaeho Jeong

Chungho Song

Sang-Hoon Hong

Eunsil Kang

Gwangyong Kim

A semiconductor package includes first bump structures that include a stud portion disposed below the second rear surface pads of the first group, and a bonding wire portion that extends from the stud portion and is connected to the first front surface pads of the first group; second bump structures disposed below the second rear surface pads of the second group; an encapsulant that encapsulates the second semiconductor chip and the first and second bump structures; and a redistribution structure disposed below the encapsulant, and that includes an insulating layer, redistribution layers disposed below the insulating layer, and redistribution vias that penetrate through the insulating layer and connect the redistribution layers to the first bump structures or the second bump structures. At least a portion of the redistribution vias connected to the first bump structures is in contact with the stud portion.

Semiconductor package and method of manufacturing the same

An image sensor package includes: a package base substrate having a cavity extending inwards from an upper surface thereof, and including a plurality of upper surface connection pads and a plurality of lower surface connection pads; an image sensor chip in the cavity, and including a chip body having a first surface and a second surface facing each other, a sensor unit located in the first surface of the chip body, and a plurality of chip pads around the sensor unit; a filter glass above the image sensor chip, and including a transparent substrate and a plurality of redistribution patterns on a lower surface of the transparent substrate; and a plurality of connection terminals between the plurality of redistribution patterns and the plurality of chip pads and between the plurality of redistribution patterns and the plurality of upper surface connection pads.

Image sensor package and system having the same

A semiconductor package that includes a circuit board having an opening therein. The circuit board includes a first portion, and a second portion disposed below the first portion. The first portion protrudes further in a horizontal direction towards the opening than the second portion. A transparent substrate is disposed on the circuit board. An image sensor chip is mounted on the circuit board. The image sensor chip includes an active array region facing the transparent substrate. A connection terminal directly contacts a lower surface of the first portion of the circuit board and an upper surface of the image sensor chip. A gap-fill member covers the connection terminal and covers a portion of an upper surface of the image sensor chip and at least a portion of a lateral side surface of the image sensor chip. The transparent substrate has a greater horizontal width than the circuit board.

Semiconductor packages having circuit boards

A sensor package includes: an image sensor including a body layer having an upper surface and a lower surface, opposite to the upper surface, a pixel layer disposed on the upper surface, a microlens array disposed on the pixel layer, a connection terminal disposed on the lower surface, and a through-via extending between the upper surface and the lower surface and electrically connected to the connection terminal; a support structure disposed on the pixel layer and having an opening in which the microlens array is accommodated; an optical filter disposed on the support structure and having a first region, overlapping the image sensor in a first direction, and a second region extending from the first region in a second direction, perpendicular to the first direction, and not overlapping the image sensor in the first direction; an encapsulant surrounding a side surface of the image sensor and a side surface of the support structure and covering and contacting a portion of a lower surface of the second region; and a connection bump disposed on the connection terminal of the image sensor. In the second direction, a first distance along a boundary where the lower surface of the optical filter at the second region contacts the encapsulant is greater than a second distance of a lower surface of the optical filter at the second region exposed from the encapsulant.

Sensor package and method of manufacturing the same

Provided are an organic light-emitting device, an apparatus including the organic light-emitting device, and an organometallic compound represented by Formula 1. The organic light-emitting device includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein: the organic layer includes the organometallic compound represented by Formula 1.

Organic light-emitting device, apparatus including the same, and organometallic compound

A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.

Semiconductor package including high thermal conductivity layer

Disclosed is a novel compound and an organic light-emitting device. The novel compound is represented by the following Chemical Formula 1, and when the novel compound is used as a material for a hole transport layer of an organic light emitting device, the novel compound allows the device to have lowered drive voltage, and improved efficiency and lifespan characteristics.

Compound and organic light emitting device including the same

Disclosed is an organic electroluminescent device with lowered driving voltage, and enhanced efficiency and lifetime.

Organic compound and organic electroluminescent device comprising the same

Organic electroluminescent devices with lowered driving voltages, and enhanced efficiencies and lifetimes are provided.

Compound and organic electroluminescent device comprising the same

The present invention relates to a mobile terminal and a method for controlling the same. A mobile terminal displays a group chat screen corresponding to a group chat, determines whether exclusive conversations between several participants in the group chat are continued over a reference range, groups the exclusive conversations between those participants in the group chat when it is determined that the exclusive conversations between those participants are continued over a reference range, and displays a skip area for selectively confirming the grouped exclusive conversations within the group chat screen, wherein the mobile terminal restricts download and output of received information belonging to the skip area and updates an indication related to the exclusive conversations corresponding to the skip area, when the information is received.

Mobile terminal and method for controlling the same

A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the semiconductor die. A first conductive layer having first and second segments is formed over a surface of the substrate with a first vent separating an end of the first segment and the second segment and a second vent separating an end of the second segment and the first segment. A second conductive layer is formed over the surface of the substrate to electrically connect the first segment and second segment. The thickness of the second conductive layer can be less than a thickness of the first conductive layer to form the first vent and second vent. The semiconductor die is mounted to the substrate with the bumps aligned to the first segment and second segment. Bump material from reflow of the bumps is channeled into the first vent and second vent.

Semiconductor device and method of forming conductive layer over substrate with vents to channel bump material and reduce interconnect voids

Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids

Growing community of inventors

Seoul, South Korea

Sunjae Kim