Globalfoundries Inc.

Sunit S Mahajan

Herbert Lei Ho

Timothy A Brunner

Melissa Alyson Smith

Derya Deniz

Shahrukh Akbar Khan

Benjamin G Moser

Domingo A Ferrer Luppi

Parul Dhagat

Anne C Friedman

Structures including a spin torque transfer magnetic tunnel junction (MTJ) stack and methods for fabricating same. A first contact is coupled with a first portion of a free layer of the MTJ stack, and a second contact is coupled with a second portion of the free layer of the MTJ stack. The free layer is laterally arranged between the first contact and the second contact.

Spin-selective electron relay

A method for preventing buckling in a substrate using a tensile hard mask is provided. The method may include forming a mask over a substrate, the hard mask including a first area having a pattern for forming a plurality of openings and an adjacent second area free of openings, and the hard mask includes a tensile stress therein. The hard mask may be used to form the plurality of openings in the substrate. Partially eroding the hard mask leaves the substrate with the plurality of openings therein and a substantially planar surface, having diminished buckling.

Using tensile mask to minimize buckling in substrate

Methods of forming polysilicon-filled deep trenches for an eDRAM are provided. The method may include forming a plurality of polysilicon-filled deep trenches in a substrate. An epitaxy-retarding dopant is introduced to an upper portion of the trenches. A plurality of fins are then formed over the substrate, with each polysilicon-filled deep trench including a corresponding fin extending thereover. A silicon layer is epitaxially grown over at least the polysilicon-filled deep trench. The dopant in the polysilicon-filled deep trenches acts to control the epitaxial growth of the silicon layer, diminishing or preventing shorts to adjacent fins and/or deep trenches at advanced technology nodes.

Controlling epitaxial growth over eDRAM deep trench and eDRAM so formed

One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.

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Halfmoon, NY, United States of America

Sunit S Mahajan