Cypress Semiconductor Corporation

Sunil Atri

Hiroyuki Saito

Shinsuke Okada

Cliff Zitlaw

An overlaid erase block (EB) mapping scheme for a flash memory provides efficient wear-leveling and reduces mount operation latency. The overlaid EB mapping scheme maps a first type of EB onto one of a plurality of physical erase blocks, in a corresponding portion of the flash memory. The first type of EB includes a plurality of pointers. The overlaid EB mapping scheme also maps each of second and third types of EBs onto one of the physical EBs that is not mapped to the first type of EB. The second type of EBs store system management information and the third type of EBs store user data. When the flash memory is started up, the overlaid EB mapping scheme scans the corresponding portion to locate the first type of EB, locates the system EBs using the pointers, and locates the data EBs using the system management information.

Block mapping systems and methods for storage device

Overlaid erase block mapping

A system and method for programming a memory device with debug data upon a system failure is disclosed herein. For example, the system can include a timer device, a buffer, a register, and a memory device. The buffer can be configured to receive debug data. The register can be configured to receive memory address information. Also, the memory device can be configured to store the debug data from the buffer at a memory address corresponding to the memory address information when a timer value of the timer device reaches zero. Further, the system can include a processing unit configured to provide the timer value to the timer device and the memory address information to the register.

Growing community of inventors

Cupertino, CA, United States of America

Sunil Atri