Samsung Electronics Co., Ltd.

Sunhong Jun

Jaeho Kim

Younghoon Sohn

Ingi Kim

Inkeun Baek

Namil Koo

Sungyoon Ryu

Ikseon Jeon

Yusin Yang

JunBum Park

Suhwan Park

Sungil Choi

Jinwoo Ahn

Wontae Kim

Kyungbeom Kim

Yeeun Park

Eunhyuk Choi

A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Terahertz signal measuring apparatus and measuring method

Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.

Method of extracting properties of a layer on a wafer

A dual resolution spectrometer includes a slit plate comprising a slit receiving light reflected from a measurement target. The slit plate directs the light reflected from the measurement target to a first mirror. The first mirror reflects light from the slit to a diffraction grating. The diffraction grating disperses light from the first mirror according to a wavelength of the light. The diffraction grating directs light in a first wavelength region to a second mirror and directs light in a second wavelength region to a third mirror. The second mirror reflects the light in the first wavelength region to a detector. The third mirror reflects the light in the second wavelength region to the detector. The detector detects the light in the first wavelength region and the light in the second wavelength region with different resolutions from each other.

Dual resolution spectrometer, and spectrometric measurement apparatus and method using the spectrometer

An inspection system includes a main support die configured to receive a target specimen; an auxiliary support die adjacent to the main support die and configured to receive a reference specimen; a cleaning device configured to remove contaminants from the reference specimen; an objective lens unit configured to direct light to main support die from a light source adjacent to the objective lens unit; a spectroscope between the objective lens unit and the light source; a detector adjacent to the objective lens unit; an imaging device between the objective lens unit and the detector; and a computer system in communication with the detector.

Inspection system including reference specimen and method of forming semiconductor device

Growing community of inventors

Suwon-si, South Korea

Sunhong Jun