Samsung Display Co., Ltd.

Lg Display Co., Ltd.

SunHee Lee

Jun Hyung Lim

Kyoung Seok Son

Jaybum Kim

Seungjun Lee

Seunghun Lee

Jina You

Yeonhong Kim

Myeongho Kim

Jaemin Moon

JungHyoung Lee

Seryeong Kim

Eunhyun Kim

Eoksu Kim

Eun Hyun Kim

Juhyuk Kwon

Eunhye Ko

JangDae Youn

A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.

Pixel circuit having increased capacitance and display device including the same

A display device includes a display area and a functional area defining a through-portion therein. At least a portion of the functional area is surrounded by the display area. The display device includes an insulation layer disposed on a base substrate and defining a disconnection portion in the functional area, a pixel array disposed on the base substrate in the display area, and a mask pattern including a metal oxide and extending along the disconnection portion in a plan view.

Display device

A light emitting device includes a substrate; a first electrode disposed on the substrate; an organic material layer disposed on the first electrode and including a first resonance auxiliary layer; and a second electrode disposed on the organic material layer, wherein the first resonance auxiliary layer includes a first compound with a lowest unoccupied molecular orbital (LUMO) level of −4 eV or less and a second compound with a highest occupied molecular orbital (HOMO) level of −4 eV or less, and wherein the first resonance auxiliary layer has a thickness of 20% to 90% of a total thickness of the organic material layer.

Light emitting device and lighting device comprising resonance auxiliary layer

A pixel circuit includes an organic light emitting element, a switching transistor configured to be turned on or off in response to a scan signal, a storage capacitor configured to store a data signal applied through a data line when the switching transistor is turned on, a driving transistor configured to allow a driving current corresponding to the data signal stored in the storage capacitor to flow into the organic light emitting element, and an emission control transistor implemented by an oxide thin film transistor, connected in series to the organic light emitting element and the driving transistor between a high power voltage and a low power voltage, and configured to be turned on or off in response to an emission control signal. The pixel circuit performs a back-biasing operation that compensates for a change in a threshold voltage of the emission control transistor by applying a back-biasing voltage to the emission control transistor.

Pixel circuit and organic light emitting display device including i he same

A lighting device comprises a substrate including an active area; a first electrode disposed on the substrate and including a transparent conductive material; an organic material layer disposed on the first electrode and including a first light emitting layer and a second light emitting layer; and a second electrode disposed on the organic material layer and including a reflective material, wherein the first light emitting layer emits light having a first wavelength and the second light emitting layer emits light having a second wavelength, and wherein the second light emitting layer includes a first dopant absorbing the light having the first wavelength and emitting the light having the second wavelength.

Lighting device comprising plurality of light emitting layers

A semiconductor device includes a base substrate, a first thin film transistor disposed on the base substrate, a second thin film transistor disposed on the base substrate, and a plurality of insulating layers disposed on the base substrate. The first thin film transistor includes a first input electrode, a first output electrode, a first control electrode, and a first oxide semiconductor pattern, which are disposed on the base substrate. The second thin film transistor includes a second input electrode, a second output electrode, a second control electrode, and a second oxide semiconductor pattern, which are disposed on the base substrate. The first oxide semiconductor pattern includes a crystalline oxide semiconductor, and the second oxide semiconductor pattern includes an oxide semiconductor having a crystal structure different from a crystal structure of the first oxide semiconductor pattern.

Semiconductor device and method of manufacturing the same

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Seoul, South Korea

SunHee Lee