Samsung Electronics Co., Ltd.

Sungyu Choi

Rakhwan Kim

Daeyong Kim

Seongheum Choi

A semiconductor device includes an active region extending in a first direction on a substrate; a gate structure extending in a second direction on the substrate, intersecting the active region, and including a gate electrode, source/drain region disposed on the active region on at least one side of the gate structure, a first contact structure connected to the source/drain region; a first gate contact structure disposed on and connected to the gate electrode; a second contact structure disposed on and connected to the first contact structure; and a second gate contact structure disposed on and connected to the first gate contact structure. The second contact structure and/or the second gate contact structure may include an upper metal layer and a metal liner covering a lower surface and side surfaces of the upper metal layer. An external surface of the metal liner may have surface roughness.

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Namyangju-si, South Korea

Sungyu Choi