Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Advanced Technology, Inc.

Sungyoon Ryu

Younghoon Sohn

Yusin Yang

Kwangeun Kim

Souk Kim

Seokjung Yun

Seungbum Hong

Hoon Bae Kim

Hoon Sik Kim

Soohyun Kim

Sujin Lee

Jaeyong Lee

Myungjun Lee

Chungsam Jun

Ingi Kim

Namil Koo

Inkeun Baek

Sunhong Jun

Ikseon Jeon

Kwangsoo Kim

Daejun Park

Sungil Choi

Jinwoo Ahn

Jiwon Yeom

Wontae Kim

Eunhyuk Choi

Youngjoo Hong

Minho Rim

Seungryeol Oh

Yeeun Park

Kyungbeom Kim

Jeongho Ahn

Kihak Nam

Hyojun Park

Hyungchul Lee

Wonsik Kwon

Myoungkyu Choi

Dayoung Yoon

Hwiwoo Park

A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.

Terahertz signal measuring apparatus and measuring method

A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

Method of inspecting tip of atomic force microscope and method of manufacturing semiconductor device

A test apparatus includes a movable stage to support a sample, tips above the stage that have different shapes and alternately perform profiling and milling on the sample, a tip stage connected to a cantilever coupled to the tips, the tip stage to adjust a position of the cantilever, a position sensor to obtain information about a positional relationship between the tips and the sample, a stage controller to control movements of the stage and the tip stage, based on the information about the positional relationship, and a tip controller to select the tips for performing the profiling or milling and to determine conditions for performing milling, wherein a depth of the sample being processed by the milling in the first direction is controlled based on a relationship between a distance between the tips and the sample and a force between the tips and the sample.

Test apparatus and test method thereof

Provided is a through-focus image-based metrology device including an optical device, and a computing device configured to acquire at least one through-focus image of a target from the optical device, generate an intensity profile based on the acquired at least one through-focus image, and perform metrology on the target based on the generated intensity profile, wherein the optical device includes a stage on which the target is disposed, the stage being configured to move by one step in at least one direction based on control of the computing device, and to acquire the at least one through-focus image, an image sensor disposed on the stage, an objective lens disposed between the image sensor and the stage, the objective lens being configured to transmit reflected light from the target, and a light source configured to emit illumination light to the target through the objective lens.

Through-focus image-based metrology device, operation method thereof, and computing device for executing the operation

An inspection system includes a main support die configured to receive a target specimen; an auxiliary support die adjacent to the main support die and configured to receive a reference specimen; a cleaning device configured to remove contaminants from the reference specimen; an objective lens unit configured to direct light to main support die from a light source adjacent to the objective lens unit; a spectroscope between the objective lens unit and the light source; a detector adjacent to the objective lens unit; an imaging device between the objective lens unit and the detector; and a computer system in communication with the detector.

Inspection system including reference specimen and method of forming semiconductor device

According to embodiments, a wafer inspection device is provided. The wafer inspection device includes a porous chuck including a plurality of pores formed all over the porous chuck to allow pressure for fixing a wafer to be applied thereto, a chuck driving device, a back side inspection optical system configured to inspect a portion of a back surface of the wafer, and a position identification optical system, wherein the porous chuck includes a plurality of holes uniformly formed all over the porous chuck to partially expose the back surface of the wafer and a slit exposing the back surface of the wafer and extending in one direction parallel to a top surface of the porous chuck.

Wafer inspection device and method of manufacturing semiconductor device by using the wafer inspection device

The present invention relates to a prism for inducing Brewster's angle transmission and a fluorescence detection apparatus for enhancing a signal-to-noise ratio using thereof, and more specifically, to a prism for inducing Brewster's angle transmission and a fluorescence detection apparatus for enhancing a signal-to-noise ratio using thereof, in which evanescent waves are generated when light is cast onto fluorescence material applied on a sample surface at an angle greater than a critical angle, and the evanescent waves are used as excitation light of fluorescence to induce total internal reflection of the light so that the light may pass through the prism at a Brewster's angle. Therefore, effects of the re-reflected light on the sample surface are removed, and a signal-to-noise ratio (SNR) is improved at the same time. In addition, the prism is miniaturized, and therefore, usage of the sample area and efficiency of the light amount are improved.

Prism for inducing Brewster's angle transmission and fluorescence detection apparatus for improving signal-to noise ratio using thereof

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Seoul, South Korea

Sungyoon Ryu