Samsung Electronics Co., Ltd.

Hl Klemove Corp.

Sungyong Lim

Sungyeol Kim

Seungbo Shim

Youngdo Kim

Sang Ki Nam

Sangki Nam

Vasily Pashkovskiy

Sunggil Kang

Namkyun Kim

Kwangyoub Heo

Akira Koshiishi

Beomjin Yoo

Sungjin Kim

Minsung Kim

Kyungmin Lee

Sungil Cho

Yongwon Cho

Jinseok Lee

Donghyeon Na

Nam Kyun Kim

Myunggeun Song

Jinyeong Yun

Meehyun Lim

Daewon Kang

Jin Young Bang

Chansoo Kang

Jonghun Pi

Minjoon Kim

Hyungjung Yong

Younghwan Choi

Hyosin Kim

Hadong Jin

Sunghwi Cho

Chungho Cho

Siyoung Koh

Masahiko Yamabe

Dongyub Kim

Jongbeom Moon

Chunyoon Park

Jaejoong Lee

Byungkook Cho

Hyeoncheol Jin

Tae-sun Shin

Deokjin Kwon

Bongju Lee

An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.

Apparatus for providing RF power and operating method thereof

A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.

RF generating device and semiconductor manufacturing apparatus including the same

Provided are a hybrid matcher capable of precisely performing impedance matching at a high speed when RF power is applied with a multi-level pulse in a facility using RF plasma, and an RF matching system including the hybrid matcher. The hybrid matcher includes a matching circuit in which a plurality of variable element-switch sets are connected to each other in parallel, the variable element-switch sets each including a variable impedance element and a switch connected to the variable impedance element in series and electrically operating therewith, a sensor disposed at a front stage of the matching circuit and configured to measure a current and a voltage of radio frequency (RF) power applied from an RF generator, a variable element driver configured to drive the variable impedance element, a switch driver configured to drive the switch, and a controller configured to control the variable element driver and the switch driver.

Hybrid matcher and radio frequency matching system including the hybrid matcher

A semiconductor processing system includes: a semiconductor processing chamber including an electrostatic chuck disposed in a chamber housing, and a first power supplier for supplying first radio frequency (RF) power to an internal electrode disposed in the electrostatic chuck; a voltage measuring device for measuring a voltage corresponding to the first RF power to output a digital signal; and a control device for outputting an interlock control signal to the semiconductor processing chamber, when it is determined that the voltage increases to be within a predetermined reference range based on the digital signal. The electrostatic chuck is configured to enable a wafer to be seated on a surface of the electrostatic chuck.

System of semiconductor process and control method thereof

An electric field measuring apparatus includes an electrostatic chuck with a through hole and holding a wafer, a lift pin picking up the wafer, a driver vertically moving the lift pin along the through hole, a probe in the lift pin and having a refractive index changed by an electric field of the wafer, the probe including an electro-optical crystal, an optical waveguide forming at least one internal path of light having a polarization characteristic changed by the changed refractive index between the probe and the wafer, and a control module controlling the lift pin and the driver. The lift pin moves to first and second positions. The control module calculates a strength of the electric field of the wafer, using electric field data measured using the probe at each of the first and second positions.

Electric field measuring apparatus and method of measuring electric field using the same

A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Apparatus and method fabricating semiconductor device

A diagnostic device for diagnosing distribution of a radical in a plasma processing chamber, the diagnostic device, may include a spectrometer receiving an optical signal through at least one optical channel connected to the plasma processing chamber, and performing spectral analysis on the optical signal in response to a synchronization signal corresponding to each of states of a multi-level pulse applied to the plasma processing chamber and a synchronizer generating the synchronization signal corresponding to each of the states of the multi-level pulse.

Device for radical diagnostic in plasma processing chamber, radical diagnostic system having the same, and operating method thereof

A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

Hollow cathode, an apparatus including a hollow cathode for manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using a hollow cathode

The apparatus for assisting driving of host vehicle includes a first sensor mounted to the host vehicle and having a field of view in rear of the host vehicle, the first sensor to obtain rear image data; a second sensor selected from a group consisting of a radar sensor and a LiDAR sensor and mounted to the host vehicle, the second sensor to have a field of sensing in rear of the host vehicle and obtain rear detecting data; and a controller to process the rear image data and the rear detecting data. The controller may be determine a possibility of a collision of a rear object located at the rear of the host vehicle based on processing the rear image data and the rear detecting data, and to adjust a seat of the host vehicle to a preset position based on an expected collision of the rear object.

Apparatus for assisting driving and method thereof

Provided is An apparatus for assisting driving of a host vehicle, the apparatus comprising: a camera mounted to the host vehicle and having a field of view in front of the host vehicle, the camera configured to acquire image data; and a controller including a processor configured to process the image data, and configured to receive a map on which the host vehicle travels from a server, compare a speed limit included in the map with a speed limit included in the image data, and control a display of the host vehicle so as to display the speed limit based on the image data.

Driver assistance apparatus and method of thereof

Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

Growing community of inventors

Seoul, South Korea

Sungyong Lim