Dms Co., Ltd.

Sungyong Ko

Weonmook Lee

Kunjoo Park

Hwankook Chae

Keehyun Kim

Minshik Kim

Hyeokjin Jang

Kwangmin Lee

Byoungil Lee

A side gas injector for a plasma reaction chamber is provided. The side gas injector includes a circular distribution plate and a cover plate. The circular distribution plate includes an injection hole for injecting a reaction gas and a distribution channel part for distributing the reaction gas such that the reaction gas introduced from the injection hole can be radially simultaneously jetted in a plurality of positions along an inner circumference surface of the distribution plate. The cover plate is coupled to a top of the distribution plate and seals a top of the distribution channel part.

Side gas injector for plasma reaction chamber

A workpiece de-chucking device of a plasma reactor for dry-cleaning the inside of a reaction chamber and an ElectroStatic chuck (ESC) during workpiece de-chucking and a workpiece de-chucking method using the same are provided. The workpiece de-chucking device includes a lifting unit, an ICP source power unit, and a controller. The lifting unit lifts a workpiece mounted on a top surface of an ESC. The ICP source power unit forms a magnetic field in an inductive coil arranged outside a dielectric window. The controller outputs a source power control signal, a lift control signal, and a de-chucking control signal.

Workpiece de-chucking device of plasma reactor for dry-cleaning inside of reaction chamber and electrostatic chuck during workpiece de-chucking, and workpiece de-chucking method using the same

A plasma reactor and an etching method using the same are provided. The method includes a first changing step of changing the number or arrangement structure of inductive coils connecting to an RF source power supply unit, a step of applying RF source power and generating high density plasma, a first etching step of etching a first etch-target layer of a workpiece, a first stopping step of stopping applying the RF source power, a second changing step of changing the number or arrangement structure of the inductive coils, a step of applying RF source power to corresponding inductive coils and generating low density plasma, a second etching step of etching a second etch-target layer of the workpiece, and a second stopping step of stopping applying the RF source power.

Plasma reactor and etching method using the same

A plasma chemical reactor is provided. The reactor includes a chamber, a cathode assembly, and a baffle plate. The chamber forms a plasma reaction space. The cathode assembly includes a cathode support shaft and a substrate support. The cathode support shaft is coupled at one side to a wall surface of the chamber. The substrate support is coupled to the other side of the cathode support shaft and supports the substrate. The baffle plate is out inserted and coupled to the substrate support, and has a plurality of vents arranged to be spaced apart and through formed such that reaction gas can pass through, and the vents asymmetrically arranged and formed to get a vent area smaller at an opposite side than a top side of the cathode support shaft.

Growing community of inventors

Suwon, South Korea

Sungyong Ko