Samsung Electronics Co., Ltd.

SungYong Cho

Jaehyeok Baek

MoonChul Choi

Sang-Hoon Kim

Sungrae Kim

Hye-Ran Kim

Hyeran Kim

Chisung Oh

Gilyoung Kang

Donggun An

Min Ho Maeing

Minho Maeing

Seongyeal Yang

Provided is a memory system including: a memory device; and a memory controller configured to transmit a command and address (CA) signal and a data clock (WCK) signal to the memory device, and transmitting a data (DQ) signal to the memory device or receive the DQ signal from the memory device. The memory device may include a clock distribution network configured to generate a first division clock signal for sampling the CA signal and a second division clock signal for sampling the DQ signal from the data clock signal, a CA sampler configured to sample the CA signal based on the first division clock signal, and a CA parity check circuitry configured to output a parity error signal in response to a parity error occurring for the CA signal, and the memory controller may include processing circuitry configured to enter CA training in response to receiving the parity error signal.

Memory device, memory system and method for operating memory system including command and address training

A ZQ calibration circuit included in a semiconductor memory device includes a reference voltage selector configured to output a reference voltage selected from among a first reference voltage and a second reference voltage generated based on a first supply voltage and a second supply voltage, in response to a selection signal, a ZQ engine configured to generate a pull-up code and a pull-down code based on the selected reference voltage, and a loop selector configured to output the selection signal according to whether each of the pull-up code and the pull-down code is toggled. Levels of the first and second reference voltages are different from each other, smaller than a level of the first supply voltage, and greater than a level of the second supply voltage.

ZQ calibration circuit, operation method of the ZQ calibration circuit, and semiconductor memory device

A reference voltage generation device includes a noise information generation circuit configured to generate power noise information based on a first power noise and a second power noise, the first power noise and the second power noise generated based on a first power and a second power supplied to a first electronic device and propagated from the first electronic device to a second electronic device through a communication line, and the first electronic device and the second electronic device configured to perform data communication using a multi-level signaling scheme. The device includes a reference voltage generation circuit configured to generate three or more reference voltages for the multi-level signaling scheme based on the power noise information, and the second electronic device is configured to use the three or more reference voltages.

Device of generating reference voltages for multi-level signaling and memory system including the same

A memory system includes a host system having a memory controller therein, which is configured to generate a command address signal. The memory controller includes a first bit signal generator configured to generate a data signal as a plurality of data bits, a second bit signal generator configured to generate a command address bus inversion bit (CABIB) having a high or low logic level that is a function of a number of data bits within the data signal having a predetermined logic level, and a parity bit generator configured to set a parity signal to a first logic level when a total number of data bits within the data signal and the CABIB having a high logic level is an even number. A storage system is also provided, which is configured to write or read data in response to the command address signal received from the host system. The memory controller is configured to set the CABIB to a high logic level when: (i) 'n', which is a number of bits included in the command address signal, is a positive integer greater than one, and (ii) a number of data bits within the data signal having a low logic level is greater than or equal to (n/2)−1.

Memory systems and controllers for generating a command address and methods of operating same

Provided is a transmitting device for enlarging the size of a data eye of a transmission signal. The transmitting device includes an output driver including a plurality of driver circuits that drive a plurality of multi-level signals onto an output node, and a logic circuit configured to detect a direction of a pull-up or pull-down operation of each of the plurality of driver circuits by transitions of the plurality of driver control signals and generate pulse signals. The plurality of multi-level signals are driven based on a plurality of driver control signals and pulse signals, respectively, and the logic circuit provides a pulse signal to at least one static driver circuit connected to a driver control signal that does not transition, from among the plurality of driver circuits.

Growing community of inventors

Suwon-si, South Korea

SungYong Cho