Samsung Electronics Co., Ltd.

Sungyeon Lee

Sang-Hyun Joo

Yoon-Hee Choi

Yongkyu Lee

Yeongtaek Lee

In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time. The program loop includes a programming step for programming selected memory cells among memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In programming the selected memory cells, a level of a voltage being applied to a common source line connected to the memory cells in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Nonvolatile memory device and method of programming the same

A resistive memory device includes memory cell array blocks, a reference cell array block, two first and second sink transistors, and a word line. Each of the memory cell array blocks includes a row line, and the reference cell array block includes a reference row line. One of the first sink transistors is disposed between one end of the row line and a ground and the other of the first sink transistors is disposed between an opposite end of the row line and the ground. One of the second sink transistors is disposed between one end of the reference row line and the ground and the other of the second sink transistors is disposed between an opposite end of the reference row line and the ground. The word line is coupled to gates of the first and second sink transistors.

Growing community of inventors

Seoul, South Korea

Sungyeon Lee