Samsung Electronics Co., Ltd.

Hewlett-packard Development Company, L.p.

Sungwoo Kang

Youngmook Oh

Sanghyun Lee

Jongchul Park

Jeongyun Lee

Sunhyung Lee

Chongkwang Chang

Hojin Ryu

Seobum Lee

Gahyun Lim

Chunghowan Kim

A semiconductor device according to some embodiments of the disclosure may include a fin type active pattern extending in a first direction, a plurality of gate structures on the fin type active pattern and extending in a second direction different from the first direction, a plurality of inter-contact insulation patterns on respective ones of the plurality of gate structures, a plurality of interlayer insulation layers on side surfaces of the plurality of gate structures, and a plurality of contact plugs respectively between pairs of the plurality of gate structures. The fin type active pattern may include a plurality of source/drains. Lower ends of the plurality of contact plugs may contact the plurality of source/drains. The plurality of gate structures may each include a first gate metal, a second gate metal, a gate capping layer, a gate insulation layer, a first spacer, and a second spacer.

Semiconductor device including self-aligned contact and method of manufacturing the semiconductor device

An example fuser includes a flexible fixing belt, a backup member to form a fixing nip with the fixing belt, a heater substrate for heating the fixing belt at the fixing nip and having a first surface comprising a heating element pattern, a common terminal and a driving power supply terminal for supplying power to the heating element pattern, and a second surface in contact with the fixing belt, and a temperature sensor sheet comprising a temperature sensor, a sensing terminal and an electric wire connecting the temperature sensor to the sensing terminal, wherein the temperature sensor sheet is in contact with the first surface of the heater substrate such that the sensing terminal and the electrical wire do not overlap the common terminal and the driving power supply terminal.

Temperature sensor placement for heater substrate in fuser

A fixing belt includes a substrate layer inducting a first base resin and a first thermally conductive filler dispersed in the first base resin; and a release layer provided on the substrate layer, wherein the first base resin includes at least one selected from a polyimide, a polyamide, and a polyamideimide and the first thermally conductive filler includes at least one selected from carbon black, graphite, boron nitride (BN), carbon nanotubes (CNTs), and carbon fibers, and the substrate layer has a thermal conductivity in a thickness direction of about 1.5 W/m&#xb7;K or more.

Fixing belt with high thermal conductivity

An integrated circuit device includes a fin-type active area that extends on a substrate in a first direction, a gate structure that extends on the substrate in a second direction and crosses the fin-type active area, source/drain areas arranged on first and second sides of the gate structure, and a contact structure electrically connected to the source/drain areas. The source/drain areas comprise a plurality of merged source/drain structures. Each source/drain area comprises a plurality of first points respectively located on an upper surface of the source/drain area at a center of each source/drain structure, and each source/drain area comprises at least one second point respectively located on the upper surface of the source/drain area where side surfaces of adjacent source/drain structures merge with one another. A bottom surface of the contact structure is non-uniform and corresponds to the first and second points.

Integrated circuit devices and methods of manufacturing the same

A method of controlling an etching process for forming fine patterns of a semiconductor device includes forming a lower pattern having a plurality of openings on a substrate, obtaining a width value of the lower pattern, and controlling a process recipe of an etching process for forming the lower pattern by using the width value.

Growing community of inventors

Suwon-si, South Korea

Sungwoo Kang