Stats Chippac Pte. Ltd.

Samsung Electronics Co., Ltd.

Samsung Life Welfare Foundation

Stat Chippac Ltd.

SungWon Cho

ChangOh Kim

DaeSik Choi

Kyowang Koo

KyoungHee Park

BongWoo Choi

Jiwon Lee

Il Kwon Shim

OhHan Kim

KyuWon Lee

Hun Teak Lee

JoonYoung Choi

Yaojian Lin

Sungsoo Kim

Byung Joon Han

DeokKyung Yang

In Sang Yoon

JoHyun Bae

InSang Yoon

SeungYong Chai

KyoWang Koo

Hyung Sang Park

KiYoun Jang

DongSoo Moon

Taewoo Lee

TaeWoo Kang

YongHee Kang

YoungJoon Kim

Byeonghoon Kim

Sung Ho Choi

Sung Jae Lim

Jong Ho Shin

DongSoo Moo

Dong Won Son

Sung Soo Kim

Ha-Young Kim

KyungOe Kim

HyungSang Park

Jongseon Ahn

Ji-Hyun Lee

Joohee Park

Seung Jun Hyun

TaeWoo Lee

Yoonho Choi

Seong Won Park

Sang-Hyun Yoo

Juhak Song

Hye-Jin Kam

Mira Kang

Jeongeuy Park

Jidong Sung

Heeyoung Shin

Soojin Cho

Seonhong Choi

Dongug Ko

A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.

Shielded semiconductor package with open terminal and methods of making

A semiconductor device has a substrate. A lid is disposed over the substrate. An encapsulant is deposited over the substrate. A film mask is disposed over the encapsulant with the lid exposed from the film mask and encapsulant. A conductive layer is formed over the film mask, encapsulant, and lid. The film mask is removed after forming the conductive layer.

Semiconductor device with partial EMI shielding and method of making the same

A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

Semiconductor device with partial EMI shielding removal using laser ablation

A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.

Shielded semiconductor packages with open terminals and methods of making via two-step process

A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

EMI shielding for flip chip package with exposed die backside

Emi shielding for flip chip package with exposed die backside

A vertical semiconductor device may include may include a substrate, a stacked structure, an insulating interlayer, a buffer pattern and a first contact plug. The stacked structure may include insulation patterns and conductive patterns stacked on each other on the substrate. The conductive patterns may extend in a first direction parallel to an upper surface of the substrate, and edges of the conductive patterns may have a staircase shape. The conductive patterns may include pad patterns defined by exposed upper surfaces of the conductive patterns. The insulating interlayer may cover the stacked structure. The buffer pattern may be on the insulating interlayer. The first contact plug may pass through the buffer pattern and the insulating interlayer. The first contact plug may contact one of the pad patterns. The buffer pattern may reduce defects from forming the first contact plug.

Vertical semiconductor devices

An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

Integrated circuit packaging system with shielding and method of manufacture thereof

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Kyoung-gi-Do, South Korea

SungWon Cho