Samsung Electronics Co., Ltd.

Sungsoo Yim

Yoonyoung Choi

Seungjin Kim

Sejin Park

Byunghyun Lee

Jinwoo Bae

Hyukwoo Kwon

Suklae Kim

Byeongmoo Kang

Seongmo Koo

An integrated circuit semiconductor device includes a plurality of cylindrical structures separated from each other on a substrate; and a plurality of supporters having an opening region exposing side surfaces of the plurality of cylindrical structures, the plurality of supporters being in contact with the side surfaces of the plurality of cylindrical structures and supporting the plurality of cylindrical structures, wherein each of the plurality of supporters has both side surfaces having slopes and has a top width that is less than a bottom width.

Integrated circuit semiconductor device

A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.

Methods of forming a capacitor, semiconductor device, and fine pattern, and semiconductor device formed by the methods

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Seoul, South Korea

Sungsoo Yim