Entegris, Inc.

Sungsil Cho

Bryan Clark Hendrix

Jae Eon Park

Thomas H Baum

Seobong Chang

Dahye Kim

Soojin Lee

Philip S H Chen

Shawn D Nguyen

HwanSoo Kim

DaHye Kim

SooJin Lee

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.

Silicon precursor compounds and method for forming silicon-containing films

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

Precursors and methods for preparing silicon-containing films

Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with Oplasma.

Method for forming carbon rich silicon-containing films

Growing community of inventors

Anyang-si, South Korea

Sungsil Cho