Samsung Electronics Co., Ltd.

Sungsam Lee

Sanghyun Lee

Satoru Yamada

Min Hee Cho

Junsoo Kim

Moonyoung Jeong

Chunhyung Chung

Kyo-Suk Chae

Hyoshin Ahn

Dongkak Lee

Joohyun Jeon

Eunae Choi

A semiconductor device including a semiconductor substrate including a trench, the semiconductor substrate having a crystal structure; and an insulating layer covering an inner sidewall of the trench, wherein the inner sidewall of the trench has at least one plane included in a {320} family of planes of the crystal structure or at least one plane similar to the {320} family of planes.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a plurality of first signal lines crossing a plurality of second signal lines. At least one of the first signal lines has a first end to receive a first voltage and a second end to receive a second voltage. The first and second voltages are applied simultaneously to respective ones of the first and second ends. A difference between the first and second voltages causes joule heating in the at least one first signal line. The joule heating may correct one or more defects in the semiconductor device.

Semiconductor devices capable of self-curing

A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer.

Method of thin silicon deposition for enhancement of on current and surface characteristics of semiconductor device

Growing community of inventors

Yongin-si, South Korea

Sungsam Lee