Samsung Electronics Co., Ltd.

Sungmoon Lee

Juyoun Kim

Bongseok Suh

Jooho Jung

Euichul Hwang

Sangmin Yoo

Hyungjoo Na

Heonjong Shin

Doohyun Lee

Minchan Gwak

Sunghun Jung

Yongsik Jeong

Sangwon Jee

Yeongchang Roh

A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Semiconductor device

A method of manufacturing a semiconductor device includes forming an active region on a substrate, forming a gate structure on the substrate intersecting the active region, removing an upper portion of the gate structure and forming a gate capping layer, forming a preliminary contact plug electrically connected to a portion of the active region, the preliminary contact plug including first and second portions, forming a mask pattern layer including a first pattern layer covering an upper surface of the gate capping layer, and a second pattern layer extending from the first pattern layer to cover the second portion of the preliminary contact plug, and forming a contact plug using the mask pattern layer as an etch mask by recessing the first portion of the preliminary contact plug exposed by the mask pattern layer to a predetermined depth from an upper surface of the preliminary contact plug.

Semiconductor device having a source/drain contact plug with an upwardly protruding portion

Method of manufacturing a semiconductor device having a source/drain contact plug with a recessed portion using a mask pattern layer

Growing community of inventors

Suwon-si, South Korea

Sungmoon Lee