Samsung Electronics Co., Ltd.

Sungmin Ahn

Hyungjin Kim

Minhwan Seo

Wondon Joo

Jiyoung Chu

Jiyoung Kim

Yunpyo Hong

Jungchul Lee

Jungyu Lee

Sangwoo Bae

Jisu Ryu

Heangsu Kim

Ilwoo Kim

Ono Kazuya

Dongyoon Koo

Yeongseon Kim

An optical apparatus includes a folding mirror configured to direct first and second illumination lights on first and second alignment marks respectively and reflect first and second reflected lights reflected from the first and second alignment marks in different horizontal directions respectively, first and second lenses arranged respectively in optical paths of the first and second reflected lights reflected from the first and second reflective surfaces of the folding mirror, first and second reflection portions configured to reflect the first and second reflected lights passing through the first and second lenses respectively, and a beam splitter prism configured to divide an illumination light incident through a first surface into the first and second illumination lights and direct to the first and second reflection portions, and transmit the first and second reflected lights reflected by the first and second reflection portions through a second surface.

Optical assembly for alignment inspection, optical apparatus including the same, die bonding system and die bonding method using the same

A method of bonding a die to a wafer using a die bonding system measures, using an obtained image showing interference fringes, a parallelism between the die and the wafer. In some embodiments, parallelism and die deformation are detected using interference fringes produced by an optical apparatus of the die bonding system. A parallelism measurement optical apparatus includes a light source, an optical assembly configured to control polarization of a reference light and a measurement light. In some embodiments, the measurement light is sequentially incident on and reflected from a first measurement surface and a second measurement surface that are spaced apart along a vertical direction to face each other, and is emitted to have information on parallelism between the first and second measurement surfaces. In some embodiments, a first polarizer is configured to interfere the reference light and the measurement light emitted from the optical assembly with each other. A light detector is configured to detect an interference signal of lights including the interference fringes.

Optical assembly for parallelism measurement, optical apparatus including the same, die bonding system and die bonding method using the same

A method for operating an electronic device including at least one communication circuit and a display include receiving, via a connection from another electronic device, data that is encrypted based on scan of the barcode through a camera of the other electronic device. The method include executing the initial setup based on at least one signal received from the other electronic device after authenticating the other electronic device by using the data.

Electronic device, method, and non-transitory computer-readable storage media for executing setup via communication with another device

A magnetic memory device may include a magnetic tunnel junction pattern that comprises a tunnel barrier pattern, a first magnetic pattern and a second magnetic pattern, a tunnel barrier pattern between the first and second magnetic patterns, a non-magnetic pattern on the second magnetic pattern, and a magnetic material between at least a distal portion of the non-magnetic pattern and the second magnetic pattern. The magnetic material may include a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to an interface between the second magnetic pattern and the non-magnetic pattern. The magnetic material may include magnetic atoms, and the non-magnetic material may include a proximate portion that is proximate to the second magnetic pattern, the proximate portion doped with the magnetic atoms.

Magnetic memory devices

A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.

Magnetic memory devices including in-plane current layers

Embodiments of the inventive concepts provide magnetic memory devices. The magnetic memory device includes a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. The free layer includes a perpendicular magnetic material doped with non-magnetic impurities.

Growing community of inventors

Hwaseong-si, South Korea

Sungmin Ahn