Samsung Electronics Co., Ltd.

Sungmeen Myung

Seungchul Jung

Sangjoon Kim

Seok Ju Yun

Sang Joon Kim

Jaehyuk Lee

Hyungwoo Lee

Seungkeun Yoon

Daekun Yoon

Yongmin Ju

Dong-Jin Chang

A neuromorphic device includes a plurality of resistor lines, each comprising a plurality of resistors that are serially connected to each other; one or more current sources configured to control a current flowing in each of the resistor lines to a respective current value; a plurality of capacitors configured to be electrically connected to each of the resistor lines and to sample respective voltage of each of the resistor lines representing results of neuromorphic operations; and a switch configured to connect the plurality of the capacitors in parallel after the sampling the respective voltage of each of the resistor lines, to output a sum of the results of neuromorphic operations.

Neuromorphic device and driving method thereof

A neural network apparatus includes: a plurality of memory cells each comprising a variable resistance element and a first transistor; a plurality of bit lines extending in a first direction; and a plurality of word lines extending in a second direction, crossing the bit lines and respectively connected to the first transistor of the plurality of memory cells; a plurality of sub-column circuits each comprising memory cells of the memory cells connected in parallel along the first direction; and a column circuit comprising two or more of the sub-column circuits connected in series along the second direction, wherein, when a neural network operation is performed, the column circuit outputs a summation current to a bit line connected to the column circuit based on voltage applied to the plurality of word lines.

Neural network apparatus

A computing device for performing a digital pulse-based crossbar operation and a method of operating the computing device. The computing device includes a plurality of input lines to which a pulse is selectively input in a sequential manner based on a corresponding input signal; a plurality of output lines crossing the input lines; a plurality of elements, each element being disposed at a cross point between a corresponding input line and a corresponding output line to transfer, to the corresponding output line, a pulse input to the corresponding input line in response to a corresponding weight being a first value; and a plurality of pulse counters, each pulse counter counting a number of pulses output from a corresponding output line.

Computing device for performing digital pulse-based crossbar operation and method of operating the computing device

A method and memory device with in-memory computing defection detection is disclosed. A memory device includes a memory including banks, wherein each bank includes a respective plurality of bit-cells, an in-memory computation (IMC) operator configured to perform an IMC operation between first data while the first data is in the bit-cells of the memory and second data received as input to the memory device, wherein the banks share the operator, and wherein the memory device is configured to: generate a first test pattern that is stored in the memory and generate a second test pattern applied to the IMC operator, and based thereon determine whether a defect has occurred in either the memory or the operator, and perform a repair based on the determination that a defect has occurred.

Memory and method with in-memory computing defect detection

A processing device includes: a plurality of bitcells, each of the plurality of bitcells including: a variable resistor layer including a plurality of active variable resistors and a plurality of inactive variable resistors; an active layer including a plurality of switches configured to control either one of a voltage to be applied between ends of each of the active variable resistors and a current flowing to each of the active variable resistors; and a plurality of metal layers including wires electrically connecting the active variable resistors to the switches, wherein at least one of the plurality of bitcells includes a via penetrating through the variable resistor layer and connecting at least one of the switches to at least one of the active variable resistors.

Processing device and electronic device having the same

A neuromorphic device includes a first resistor line having a plurality of first resistors that are serially connected to each other, a second resistor line having a plurality of second resistors that are serially connected to each other, one or more current sources to control a current flowing in each of the first resistor line and the second resistor line to a respective current value, a first capacitor electrically connectable to the first resistor line, and a second capacitor electrically connectable to the second resistor line.

A multi-bit cell includes: a memory storing a weight resistance corresponding to a multi-bit weight; a current source configured to apply a current to the memory to generate a weight voltage from the weight resistance; a plurality of multiplexers connected to each other in parallel and connected to the memory in series, each of the multiplexers being configured to output one signal of the weight voltage and a first fixed voltage based on a multi-bit input; and a plurality of capacitors connected to the plurality of multiplexers, respectively, each of the capacitors being configured to store a respective weight capacitance, and to generate charge data by performing an operation on the outputted signal and the weight capacitance.

Device and method with multi-bit operation

A method of performing a predetermined operation for a circuit that includes a resistor group, one end of the resistor group being configured for connection to a power supply unit, the other end of the resistor group being configured for connection to a sampling capacitor, and a parasitic capacitance existing at each node between resistors of the resistor group. The method includes in a forward process, determining a time when a sampling capacitor voltage applied to the sampling capacitor reaches a first reference voltage as a switching time; at the switching time, connecting the sampling capacitor to a ground or predetermined voltage and floating the power supply unit; in a backward process, after the switching time, determining a time when a power supply unit voltage applied to the power supply unit reaches a second reference voltage as an end time; and performing the predetermined operation based on the end time.

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Suwon-si, South Korea

Sungmeen Myung