Samsung Electronics Co., Ltd.

Sunglae Cho

Dohyung Kim

Dong-Hyun Im

Jinil Lee

Hyeyoung Park

Byoungjae Bae

Hyunjun Sim

Juhyung Seo

Suk Ho Joo

Takehiko Fujita

Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from the chamber. A pressure of the chamber is varied according to the supply of the source material and the purge of the source material.

Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device

Methods of forming phase-changeable memory devices include techniques to inhibit void formation in phase-changeable materials in order to increase device reliability. These techniques to inhibit void formation use an electrically insulating growth-inhibiting layer to guide the formation of a phase-changeable material region within a memory cell (e.g., PRAM cell). In particular, methods of forming an integrated circuit memory device include forming an interlayer insulating layer having an opening therein, on a substrate, and then lining sidewalls of the opening with a seed layer (i.e., growth-enhancing layer) that supports growth of a phase-changeable material thereon. An electrically insulating growth-inhibiting layer is then selectively formed on a portion of the interlayer insulating layer surrounding the opening. The formation of the growth-inhibiting layer is followed by a step to selectively grow a phase-changeable material region in the opening, but not on the growth-inhibiting layer.

Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials

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Gyeonggi-do, South Korea

Sunglae Cho