Samsung Electronics Co., Ltd.

Sungkyoo Park

Kyounghwan Kim

Dohoon Kim

Sangil Jung

Jaesang Yoo

Hongkook Min

Seokjong Kim

An image sensor includes a substrate including a plurality of photodiodes, a color filter array having a plurality of color filters, and a horizontal insulating layer disposed between the substrate and the color filter array, and a horizontal insulating layer is formed of only a high-K dielectric material, not including silicon, and having a dielectric constant higher than a dielectric constant of silicon oxide, and has a thickness of equal to or greater than 300 angstroms and equal to or less than 1,000.

Image sensor including simplified structure for horizontal insulating layer

A circuit under pad structure includes a substrate, a pad electrode, wiring layers interlayer insulation layers alternately disposed between the pad electrode and the substrate, and at least one circuit pattern integral with the substrate, disposed beneath the lowermost wiring layer and spanned by the pad electrode. The width of each wiring layer is smaller than the width of the wiring layer beneath it, i.e., closer to the substrate. The structure is fabricated such that it resists cracking, which maximizes its production yield, and possesses a minimal footprint.

Crack resistant circuit under pad structure and method of manufacturing the same

Growing community of inventors

Bucheon-si, South Korea

Sungkyoo Park