Lg Display Co., Ltd.

SungKi Kim

Seoyeon Im

HeeSung Lee

SeungJin Kim

MinCheol Kim

JeeHo Park

Jaewon Lee

Kwon-Shik Park

KiYong Kim

JaeYoung Oh

Jaekyun Lee

Dongkyu Lee

GiSang Hong

Heesung Lee

Jungcheol Shin

Mincheol Kim

YoungWook Lee

Jeeho Park

YongSu An

Seungjin Kim

A display device includes a transistor disposed over a substrate, a planarization layer disposed over the transistor, a light-emitting element disposed over the planarization layer; and a plurality of insulating layers disposed between the substrate and the light-emitting element, and at least one of the planarization layer and the plurality of insulating layers is a hydrogen blocking layer doped with a hydrogen capture material.

Display device

A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same

A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.

Thin-film transistor having hydrogen-blocking layer and display apparatus including the same

The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.

Thin-film transistor including two-dimensional semiconductor and display apparatus including the same

In a method for fabricating a lightweight and thin liquid crystal display (LCD), a first mother substrate, a subsidiary substrate and a thin second mother substrate are provided. An edge cut is formed by cutting edges of the first and second mother substrates and the subsidiary substrate to be inclined at a predetermined angle. An array process is performed on the first mother substrate. The subsidiary substrate is attached to the second mother substrate. A color filter process is performed on the second mother substrate having the subsidiary substrate attached thereto. The first and second mother substrates are attached together. The subsidiary substrate is separated from the first and second substrates by spraying air between the second mother substrate and the subsidiary substrate, in which the edge cut is formed.

Method of fabricating lightweight and thin liquid crystal display

Growing community of inventors

Seoul, South Korea

SungKi Kim