Samsung Display Co., Ltd.

Sungjun Kim

Kohei Ebisuno

Jingoo Jung

Sunghoon Moon

Donghyun Son

Jaesoo Jung

Soo-young Jung

Sung Jae Jung

A display device includes: a display panel including an emission region, and a peripheral region adjacent to the emission region, the emission region including a light emitting element; at least one insulating layer on the display panel; an organic layer on the at least one insulating layer, the organic layer having an opening corresponding to the emission region; and a planarization layer on the organic layer, and filling the opening. The opening has a shape including first vertices and second vertices in a plan view, each of the first vertices has an internal angle of 90° or less, and in the plan view, each of the first vertices is located farther from a center of the opening than a corresponding adjacent second vertex from among the second vertices.

Display device

A display device includes: a base layer comprising a display area and a non-display area surrounding at least a portion of the display area; an insulating layer on the base layer and having an engraved pattern formed by removing at least a portion thereof in a thickness direction to overlap the non-display area; a light emitting element overlapping the display area and on the base layer; and an organic layer overlapping the display area and the non-display area, covering at least a portion of the engraved pattern, and on the light emitting element, wherein the engraved pattern comprises an extension portion extending in an extension direction along one side of the display area and protruding portions protruding from the extension portion to a cross direction away from the display area and spaced apart from each other.

A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

Method of manufacturing thin film transistor and display device including polishing capping layer coplanar with active layer

Display device including thin film transistor with active layer portions having different thicknesses

Growing community of inventors

Yongin-si, South Korea

Sungjun Kim