Samsung Electronics Co., Ltd.

Sungjoo Park

Young Nam Yun

Ki-Hyun Ko

Jinseong Yun

Kyoungsun Kim

Sookyung Kim

Young-ho Lee

Seungjin Lee

Jonghoon Kim

Kyudong Lee

Yunho Lee

Jeonghyeon Cho

Dongyeop Kim

Heejin Cho

Yoojeong Kwon

A memory module includes a serial presence detector (SPD) configured to detect a module identification (ID) through at least one module position identification terminal, and generate at least one of the module ID and a register address corresponding to the module ID. A power management unit (PMU) is responsive to at least one of the module ID and the register address generated by the SPD. The PMU is configured to set an on-time point and/or an off-time point of an internal clock signal based on at least one of the module ID and the register address corresponding to the module ID, and further configured to generate at least one internal power supply voltage in response to the internal clock signal. A plurality of memory devices are also provided, which are configured to receive the at least one internal power supply voltage and perform an operation in response to command/address signals.

Memory module and memory system having the same

An electronic device includes: a multilayered base substrate including a plurality of substrate bases stacked on each other; a first conductive via and a second conductive via penetrating the substrate bases and spaced from each other; a conductive line electrically connecting the first conductive via and the second conductive via to each other and disposed on at least one of the substrate bases of the plurality of substrate bases; and an open stub including a first end and a second end, wherein the first end is connected to a connector of the conductive line, and the second end is opened.

Electronic device having multilayered substrate and manufacturing method thereof

A circuit board includes a first insulating layer; a first wiring pattern and a second wiring pattern each formed to be side to side with each other on an upper surface of the first insulating layer; a second insulating layer formed on the upper surface of the first insulating layer to cover the first and second wiring patterns; a third wiring pattern formed on an upper surface of the second insulating layer to overlap the first wiring pattern in a vertical direction; a fourth wiring pattern formed on the upper surface of the second insulating layer to overlap the second wiring pattern in the vertical direction; a first via passing through the second insulating layer and connecting the first and fourth wiring patterns; and a second via passing through the second insulating layer and connecting the second and third wiring patterns.

Circuit board and semiconductor module

In one embodiment, the semiconductor memory device includes at least a first semiconductor memory die, and a surface of the semiconductor memory device includes a plurality of connectors. At least one of the plurality of connectors is electrically connected to the first semiconductor memory die. The plurality of connectors include at least first and second control signal connectors. The first control signal connector is for a first control signal of a first type, the second control signal connector is for a second control signal of the first type, and the first and second control signal connectors are disposed in different areas of the surface. For example, the first type may be a chip select signal, a clock enable signal, or an on die termination enable signal.

Semiconductor memory device, memory device support and memory module

Growing community of inventors

Anyang, South Korea

Sungjoo Park