Samsung Electronics Co., Ltd.

Sungjoo An

Hyeonjin Shin

Kyung-Eun Byun

Changseok Lee

Keunwook Shin

Changhyun Kim

Yeonchoo Cho

Seunggeol Nam

Hyunjae Song

Eunkyu Lee

Janghee Lee

Jeonil Lee

Sukhoon Kim

Kaoru Yamamoto

Yeonuk Kim

Seran Oh

A semiconductor device includes a substrate including a plurality of active patterns and a bit line intersecting at least one of the plurality of active patterns on the substrate and extending in a first direction. The bit line includes a first conductive pattern extending in the first direction, a bit line capping pattern extending in the first direction on the first conductive pattern, and a graphene pattern extending in the first direction between the first conductive pattern and the bit line capping pattern. The first conductive pattern may include ruthenium (Ru). The semiconductor device may also include one or more bit line contacts arranged in the first direction under the bit line, the one or more bit line contacts electrically connected to a respective one of the plurality of active patterns.

Semiconductor devices having a graphene pattern between the first conductive pattern and the bit line capping

Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700&#xb0; C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.

Method of directly growing carbon material on substrate

Provided is a method of forming graphene. The method of forming graphene includes treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate, and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD).

Method of forming graphene

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Seongnam-si, South Korea

Sungjoo An