Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Sunghyun Moon

Jina Jeon

Jungsub Kim

Younghak Chang

Changhee Lee

Sangtae Park

Inkyu Lee

Hoon Hur

Yongdae Kim

Kyoungtae Wi

Hwankuk Yuh

Daewoon Hong

Youngjoo Yee

Myoungsoo Kim

Yeonhong Jung

Yoonchul Kim

Seonhoo Kim

A display device is discussed. The Display device includes a plurality of semiconductor light-emitting elements on a substrate, wherein the substrate includes: a base substrate; an insulating layer on the base substrate; and pads protruding farther than the insulating layer and enabling the semiconductor light-emitting elements to in contact, wherein the insulating layer includes inorganic particles, and at least a portion of some of the inorganic particles is formed so as to protrude from a surface of the insulating layer.

Display device using semiconductor light-emitting elements

Disclosed, in the present specification, is a transfer substrate for transferring a semiconductor light emitting device with high reliability and a method for manufacturing a display device by using same. Specifically, the transfer substrate includes an organic stamp layer having a protrusion, wherein the organic stamp layer contains a plurality of inorganic fillers, and the concentration of the inorganic fillers is formed so as to increase as the distance from the protrusion increases. Therefore, the protrusion of the organic stamp layer has a low concentration of the inorganic fillers so as to maintain sufficient adhesion for transferring the semiconductor light emitting device, and the stiffness of the organic stamp layer itself is formed so as to be much stronger than that of a stamp layer using a single organic material. Accordingly, it is possible to improve the accuracy of transfer by minimizing an arrangement error of the semiconductor light emitting device due to the deformation of the stamp layer occurring in a transfer process. Accordingly, it is possible to improve the accuracy of transfer by minimizing an arrangement error of the semiconductor light emitting device caused by the deformation of the stamp layer occurring during a transfer process.

Method for manufacturing display device, and transfer substrate for manufacturing display device

Discussed is a manufacturing method of a display apparatus, and the display apparatus. The display includes a substrate, an adhesive layer located on the substrate and including protruding portions, semiconductor light-emitting diodes located on the adhesive layer, an insulating layer located on the semiconductor light-emitting diodes and the adhesive layer, and wiring electrodes electrically connected to the semiconductor light-emitting diodes, wherein the protruding portions of the adhesive layer are positioned at regular intervals to correspond to the shapes of the contact surfaces of the semiconductor light-emitting diodes in contact with the adhesive layer.

Display apparatus using micro LED and manufacturing method therefor

A display device can include a wiring substrate including a first electrode, a plurality of semiconductor light-emitting elements electrically connected to the first electrode, a conductive adhesive layer on the wiring substrate and around the plurality of semiconductor light-emitting elements, an upper layer on one surface of the conductive adhesive layer and including a plurality of through holes corresponding to the plurality of semiconductor light-emitting elements, respectively, and a second electrode on the upper layer and electrically connected to the plurality of semiconductor light-emitting elements. The upper layer can include a thermosetting adhesive.

Method for manufacturing display device using semiconductor light-emitting elements and display device

Discussed is a display device having a plurality of semiconductor light-emitting diodes. At least one of the semiconductor light-emitting diodes has a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer that overlaps with the first conductive semiconductor layer, and the second conductive electrode being disposed on the second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; an undoped semiconductor layer disposed on the second conductive semiconductor layer; and protrusions formed of a porous material allowing electropolishing, and on the undoped semiconductor layer.

Display device using semiconductor light-emitting diodes

The present invention relates to a method for manufacturing a display device using semiconductor light-emitting elements and a display device. The method for manufacturing a display device according to the present invention comprises the steps of: transferring semiconductor light-emitting elements provided on a growth substrate to an adhesive layer of a temporary substrate; curing the adhesive layer of the temporary substrate; aligning the temporary substrate with a wiring substrate having a wiring electrode and a conductive adhesive layer; compressing the temporary substrate to the wiring substrate so that the semiconductor light-emitting elements bond to the wiring substrate together with the adhesive layer of the temporary substrate, and then removing the temporary substrate; and removing at least a part of the adhesive layer to expose the semiconductor light-emitting elements to the outside, and depositing electrodes on the semiconductor light-emitting elements.

The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.

Transfer head and transfer system for semiconductor light-emitting device and method for transferring semiconductor light-emitting device

A method for transmitting and receiving a signal of a terminal, according to an embodiment of the present invention includes the steps of: receiving a signal from a base station; calculating an expected value of the signal to interference plus noise ratio (SINR) based on the received signal; and choosing a beamforming method based on the expected value of SINR. The present invention can provide a method and an apparatus which apply adaptive ICIC in CoMP environment so as to maximize WSR with reduced complexity of calculation, thus having a performance comparable to that determined by the conventional method, and providing the user with a smooth communication environment with improved quality. Furthermore, a terminal communicating with a base station chooses a desirable beamforming technique with reduced complexity so as to decrease the complexity of the system and to provide higher power efficiency with a faster calculation speed. Besides, it is possible for a base station to readily choose the user group and the beamforming technique group with the optimum communication environment.

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Seoul, South Korea

Sunghyun Moon