Samsung Display Co., Ltd.

Sunghun Key

Myungsoo Huh

Choelmin Jang

Junggon Kim

Sungchul Kim

Sukwon Jung

Cheollae Roh

Jaihyuk Choi

Hyunwoo Joo

Eun Ae Jung

A display apparatus includes a substrate, a display portion that includes a plurality of pixels disposed on the substrate, and an encapsulation portion that covers the display portion and includes a hybrid encapsulation layer that includes a plurality of inorganic layers and at least one organic layer that includes a plasma polymer. An end of the hybrid encapsulation layer includes a tip portion that includes an inorganic material and a multi-layered portion which extends from the tip portion toward a central portion of the substrate and in which the plurality of inorganic layers and the at least one organic layer are sequentially and alternately stacked, and a thickness of each of the inorganic layers and the organic layer decreases toward the tip portion.

Display apparatus and method of manufacturing the same

A deposition apparatus and method of deposition are provided. The deposition apparatus includes a gas supply unit, including: a first process gas supply unit blowing a first process gas onto a deposition-target surface; a second process gas supply unit blowing a second process gas different from the first process gas onto the deposition-target surface of the substrate; and air curtain units blocking an area between an area where the process gas is blown and an area where the second process gas is blown, by blowing an inert gas.

Deposition apparatus and deposition method using the same

A deposition apparatus includes a deposition gas supply unit including an opening and closing valve. The deposition gas supply unit is configured to selectively supply a source gas or a mixture gas into a chamber. A cleaning gas supply unit is configured to supply a cleaning gas into the chamber. A deposition head includes a first deposition head including a first nozzle configured to supply the source gas and the cleaning gas and a second deposition head including a second nozzle configured to supply the source gas, the mixture gas, and the cleaning gas. An exhaust unit is configured to discharge the cleaning gas and remaining source and mixture gases from the chamber. A cleaning gas valve unit is configured to be selectively opened and closed to supply the cleaning gas to at least any one of the first deposition head and the second deposition head.

Deposition apparatus including cleaning gas valve unit and deposition method including the same

Provided are an encapsulating structure, an organic light-emitting display device including the encapsulating structure, and a method of manufacturing the same. The encapsulating structure includes a first barrier layer including a first inorganic layer having a first thickness; a plasma polymer layer on the first inorganic layer, the plasma polymer layer having a second thickness smaller than or equal to the first thickness; and a second barrier layer including at least one second inorganic layer on the plasma polymer layer. The at least one second inorganic layer has a third thickness, and the third thickness is smaller than or equal to the second thickness.

Encapsulating structure capable of securing barrier characteristics with reduced thickness, display device having encapsulating structure and method of manufacturing the same

A display device and an apparatus and method for manufacturing the same are disclosed. The display device includes: a substrate; a display unit formed on the substrate; and an inorganic layer formed on the display unit, wherein a water vapor transmission rate (WVTR) of the inorganic layer is 5&#xd7;10g/mday or less. The apparatus for manufacturing a display device includes: a chamber; a shower head for spraying a mixed gas into the chamber; a plasma generation unit for forming plasma from the mixed gas; a susceptor facing the shower head and on which a substrate is seated; and a power supply unit electrically connected to the plasma generation unit, wherein a frequency of a current supplied from the power supply unit to the plasma generation unit is between about 27 MHz and about 42 MHz.

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Yongin-si, South Korea

Sunghun Key