Skc Solmics Co., Ltd.

Sk Enpulse Co., Ltd.

Skc Co., Ltd.

Sunghoon Yun

Jang Won Seo

Jaein Ahn

Hye Young Heo

Jong Wook Yun

Su Young Moon

Tae Kyoung Kwon

Myung-Ok Kyun

Joonsung Ryou

Eun Sun Joeng

Jung Nam Lee

Embodiments relate to a polishing pad, which comprises a window having a hardness similar to that of its polishing layer. Since the polishing pad comprises a window having a hardness and a polishing rate similar to those of its polishing layer, it can produce an effect of preventing scratches on a wafer during a CMP process. In addition, the polishing layer and the window of the polishing pad have a similar rate of change in hardness with respect to temperature, so that they can maintain a similar hardness despite a change in temperature during the CMP process.

Polishing pad comprising window similar in hardness to polishing layer

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same

Disclosed is a method for producing a polishing pad, the method comprising the steps of: providing a polishing layer; forming a first through-hole penetrating the polishing layer; providing a support layer facing the polishing layer; interposing an adhesive layer between the polishing layer, which has the first through-hole, and support layer, and adhering the polishing layer and support layer to each other by means of the adhesive layer; forming, with the first through-hole as a reference point, a third through-hole penetrating the adhesive layer on a set area thereof, and a second through-hole penetrating the support layer on a set area thereof; and inserting a window inside the first through-hole.

Polishing pad and method for producing same

Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.

Porous polishing pad and process for producing the same all fees

Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polyurethane polishing pad can be adjusted. Thus, it is possible to provide a porous polyurethane polishing pad that has enhanced physical properties such as a proper level of withstand voltage, excellent polishing performance (i.e., polishing rate), and the like.

Porous polyurethane polishing pad and process for producing the same

A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; 

Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad

An embodiment relates to a polishing pad which is used in a chemical mechanical planarization (CMP) process and has excellent airtightness, wherein the polishing pad is excellent in airtightness of a window opening and thus can prevent water leakage that may occur during a CMP process.

Polishing pad having excellent airtightness

Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.

Polishing pad with improved fluidity of slurry and process for preparing same

The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.

A classifying and purifying apparatus of a solid blowing agent includes a classifier which classifies a supplied solid blowing agent into first microspheres and second microspheres, a storage connected to the classifier, in which the classified first microspheres flow in to be stored and emitted, and a filter arranged on the moving route of the solid blowing agent or the first microspheres which separates metallic substance from the object of filtering comprising the solid blowing agent or the first microspheres.

Classifying and purifying apparatus of solid blowing agents and methods of classifying and purifying solid blowing agents

Embodiments relate to a leakage-proof polishing pad for use in a chemical mechanical planarization (CMP) process and a process for producing the same.

Leakage-proof polishing pad and process for preparing the same

The present invention relates to a polishing pad that minimizes the occurrence of defects and a process for preparing the same, Since the polishing pad comprises fine hollow particles having shells, the glass transition temperature (Tg) of which is adjusted, the hardness of the shells and the shape of micropores on the surface of a polishing layer are controlled. Since the content of Si in the polishing layer is adjusted, it is possible to prevent the surface damage of a semiconductor substrate caused by hard additives. As a result, the polishing pad can provide a high polishing rate while minimizing the occurrence of defects such as scratches on the surface of a semiconductor substrate during the CMP process.

Polishing pad that minimizes occurrence of defects and process for preparing the same

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 &#x3bc;m, a specific gravity of 0.7 to 0.9 g/cm, a surface hardness at 25&#xb0; C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 101 to 250 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 &#x3bc;m.

Porous polyurethane polishing pad and process for preparing a semiconductor device by using the same

The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 &#x3bc;m, a specific gravity of 0.7 to 0.9 g/cm, a surface hardness at 25&#xb0; C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 &#x3bc;m.

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Gyeonggi-do, South Korea

Sunghoon Yun