Samsung Electronics Co., Ltd.

Sunghoon Jang

Taehwan Kim

Minsuk Choi

Seong-Bo Shim

Gun Huh

WonChan Lee

Byungho Choi

A semiconductor test apparatus includes a pogo pin that is provided on a board and is in contact with an inspected object. The pogo pin includes a barrel fixedly disposed on the board, a plunger movably coupled to the barrel, and a conduction film covering the pogo pin. The conduction film contacts a portion of the plunger to be electrically connected to the plunger while being electrically insulated from the barrel.

Semiconductor test apparatus having pogo pins coated with conduction films

A method for process proximity correction may include obtaining a point spread function (PSF) from test patterns, the test patterns including an etching process performed thereon, generating a target layout with polygonal patterns, dividing the target layout into grid cells, generating a density map including long-range layout densities, each of the long-range layout densities being obtained from the polygonal patterns located within a corresponding one of the grid cells, performing a convolution of the long-range layout densities with the PSF to obtain long-range etch skews for the grid cells, and generating an etch bias model including short-range etch skews and the long-range etch skews, each of the short-range etch skews being obtained from a neighboring region of a target pattern selected from the polygonal patterns in each of the grid cells.

Method for process proximity correction

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Seoul, South Korea

Sunghoon Jang