Skhynix Inc.

Sungho Kim

Youncheul Kim

Dongue Ko

Sungju Son

Jay Joongsoo Kim

Jingjian Ren

Sunmin Yun

Alexey Lisichenok

Eric Wong

Embodiments provide a scheme for determining the order of read threshold voltages used in a read error recovery operation for a memory system. A controller performs one or more read operations on a memory device using one or more read voltages among a plurality of read voltages in a set order. The controller detects a successful read operation among the one or more read operations. The controller determines one or more credits for the one or more read voltages, respectively, in response to the detected successful read operation. The controller updates the set order based on the determined credits.

Systems and methods for read error recovery

An e-fuse array circuit includes: an e-fuse transistor of a vertical gate type configured to have a gate for receiving a voltage of a program gate line and have one between a drain terminal and a source terminal floating; and a selection transistor of a buried gate type configured to have a gate for receiving a voltage of a word line gate line and electrically connect/disconnect the other one between the drain terminal and the source terminal with a bit line.

E-fuse array circuit

An e-fuse array circuit includes a program gate line and a word line gate line that are stretched in parallel to each other, and a metal line formed over the program gate line and the word line gate line to cover the program gate line and the word line gate line, the metal line connected to the program gate line through a plurality of contact plugs disposed at a given distance.

Growing community of inventors

Icheon-si, South Korea

Sungho Kim