Yonsei University

Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Skhynix Inc.

Korea Ocean Research and Development Institute

Sungho Kang

Yunjae Lim

Hyungdal Kwon

Sunyoung Lee

Han Ki Lee

Kichul Kim

Bonyoung Koo

Ha Young Lee

Jeong-Ho Cho

Cheon An Lee

Jaeyoung Park

Joo Hwan Lee

Cheon Lee

Woo-Sik Jeong

Kang-Chil Lee

Kyoung-Shub Lee

Il-Kwon Kang

Seokjun Jang

Dong Hyun Han

Jaeseok Park

Yong Ho Lee

Young Woo Lee

Kihyun Park

Hanmei Choi

Hyejin Jung

Taegon Kim

Sang Jun Lee

Jong-Hoon Kang

Geunkyu Choi

Minho Cheong

Jihoon Na

Su-Hae Woo

Choong-Bin Kim

Kyeonghwan Kwon

Myung-Hoon Yang

Jaewhan Sung

Hyunjune Cho

Jaehee Lee

Jongchan Park

Ingeol Lee

Kyoungsun Park

Eunyoung Jo

Gonsu Kang

Sungho Heo

Yeonsook Park

You-Bean Kim

Taewoo Han

Keewon Cho

Hak-Seok Lee

Hyejeong Hong

Youngkwang Lee

Hakjun Kim

Junhyuck Lee

Sunggu Lee

Dongho Kang

Sejong Han

A scan chain security circuit includes a scan chain including at least one flip-flop, a scan path obfuscator to obfuscate a path of a pattern sequence input to at least one first flip-flop grouped at an input side of the scan chain, in response to a first control signal, a scan path normalizer to normalize the path of the pattern sequence input to at least one second flip-flop grouped at an outside of the scan chain, in response to a second control signal, at least one dummy flip-flop interposed between the at least one first flip-flop and the at least one second flip-flop to receive a test key included in the pattern sequence, and a scan data obfuscator to damage and obfuscate an output pattern sequence output from the at least one second flip-flop, depending on whether a security key stored in a memory of a chip to be inspected is matched with the test key.

Scan chain security circuit and driving method thereof

In a method of repairing through-electrodes, a plurality of through-electrodes are grouped into a plurality of through-electrode groups. A plurality of redundant through-electrodes are grouped into a plurality of redundant through-electrode groups. Repair paths for the plurality of through-electrodes are searched. When searching the repair paths, in response to a Y-th through-electrode included in an X-th through-electrode group being a defective through-electrode or in response to receiving a first signal from an (X−1)-th through-electrode group, it is determined whether a y-th redundant through-electrode included in an x-th redundant through-electrode group is available for performing signal transmission thereto. In response to the y-th redundant through-electrode being available for performing signal transmission thereto, a second signal input to the Y-th through-electrode is transmitted to the y-th redundant through-electrode. In response to the y-th redundant through-electrode being unavailable for performing signal transmission thereto, the second signal input to the Y-th through-electrode is transmitted to an (X+1)-th through-electrode group.

Method of repairing through-electrodes, repair device performing the same and semiconductor device including the same

The present disclosure relates to an artificial intelligence (AI) system that utilizes a machine learning algorithm, and applications therefore. Disclosed is an electronic device. The electronic device comprises: a storage unit which stores therein an artificial intelligence model trained to determine parameters for a plurality of filters used for image processing on the basis of a deep neural network (DNN); and a processor for determining, through the artificial intelligence mode, parameters for each of the plurality of filters used for image processing for an input image, and performing, through the plurality of filters, filtering of the input image on the basis of the determined parameters so as to perform image processing for the input image.

Electronic device, image processing method of electronic device, and computer-readable medium

An encoding apparatus connected to a learning circuit processing learning of a deep neural network and configured to perform encoding for reconfiguring connection or disconnection of a plurality of edges in a layer of the deep neural network using an edge sequence generated based on a random number sequence and dropout information indicating a ratio between connected edges and disconnected edges of a plurality of edges included in a layer of the deep neural network.

Method of performing learning of deep neural network and apparatus thereof

The exemplary embodiments of the present invention provides a scan cluster reordering method and apparatus which perform a scan correlation aware scan cluster reordering to reduce a power generated during the scan test and place scan cells having a high correlation to be adjacent to each other by analyzing the correlation between scan cells, and reduce a test power generated during the scan test.

Scan correlation-aware scan cluster reordering method and apparatus for low-power testing

The disclosure relates to an artificial intelligence (AI) system that simulates functions such as cognition and judgment of the human brain by utilizing machine learning algorithms such as deep learning and its applications. In particular, the disclosure provides a method of controlling data input and output of a fully connected network according to an artificial intelligence system and its applications, the method including receiving, from a learning circuit, an edge sequence representing a connection relationship between nodes included in a current layer of the fully connected network, generating a compressed edge sequence that compresses consecutive invalid bits among bit strings constituting the edge sequence into one bit and a validity determination sequence determining valid and invalid bits among the bit strings constituting the compressed edge sequence, writing the compressed edge sequence and the validity determination sequence to the memory, and sequentially reading the compressed edge sequences from the memory based on the validity determination sequence such that the valid bits are sequentially output to the learning circuit.

Method and device for controlling data input and output of fully connected network

Provided are scan device and method of diagnosing scan chain fault. The scan device for diagnosing a fault includes a scan partition including a plurality of scan chains which include path control scan flipflops connected to scan flipflops in cascade. In the scan partition, connection paths of the scan flipflops are controllable. The connection paths of the path control scan flipflops are controlled to detect a position of a fault such that a fault range in the scan partition is reduced to diagnose the fault.

Scan apparatus capable of fault diagnosis and scan chain fault diagnosis method

An EUV mask inspection system includes a mask receiving unit configured to receive a manufactured EUV mask, a main chamber configured to perform an inspection on the EUV mask, and a load-lock chamber disposed between the mask receiving unit and the main chamber. The load-lock chamber includes a mask table for loading the EUV mask, an UV lamp disposed adjacent the mask table in a first direction, a cold trap disposed adjacent the mask table in a second direction, and a vacuum pump. The first direction is a direction perpendicular to a sidewall of the mask table, and the second direction is a direction perpendicular to a top surface of the mask table. The UV lamp is configured to evaporate water molecules on the EUV mask by irradiating UV light onto the EUV mask. The cold trap is configured to trap the water molecules evaporated from the EUV mask.

Extreme ultraviolet (EUV) mask inspection system, a load-lock chamber included therein, and a method for inspecting an EUV mask using the EUV mask inspection system

An electronic device and a control method therefor are disclosed. A method for controlling an electronic device according to the present invention comprises the steps of: receiving a current frame; determining a region, within the current frame, where there is a movement, on the basis of a prior frame and the current frame; inputting the current frame into an artificial intelligence learning model on the basis of the region where there is the movement, to obtain information relating to at least one object included in the current frame; and determining the object included in the region where there is the movement, by using the obtained information relating to the at least one object. Therefore, electronic device can rapidly determine an object included in a frame configuring a captured image.

Electronic device and control method therefor

The present embodiments provides a memory repair solution finding device and method which find a fault by testing a memory and find a repair solution in parallel and dynamically reconfigure the stored fault information to minimize a repair solution searching time with an optimal repair rate.

Method and apparatus for built in redundancy analysis with dynamic fault reconfiguration

The present exemplary embodiments provide a security circuit which senses a micro probe attack by changing both ends of a wire of a shield to be a high impedance state to change a connection state of the wire and analyzing a test signal reflected by the connected wire path, or senses a focused ion beam attack by changing both ends of a wire of a shield to be a high impedance state to change a connection state of the wire and analyzing a test signal which passes through a selected wire for every group, or blocks a physical approach by changing an accessible signal path to be a high impedance state when an external attack is detected by the detection circuit.

On-chip security circuit for detecting and protecting against invasive attacks

The present embodiments provide a stacked memory apparatus and a repairing method thereof which store information about a spare resource in a pre-bond process, check a spare resource available in a post-bond process, correct an error through an error correction code, and variably use the same number of spare resources to additionally ensure a number of spare resources in the post-bond process, thereby improving a yield.

Stacked memory apparatus using error correction code and repairing method thereof

Exemplary embodiments of the present invention provides a three dimensional integrated circuit and a method for repairing the three dimensional integrated circuit which dispose a signal through silicon via (STSV) or a redundant through silicon via (RTSV) for each basic unit in which a through silicon via (TSV) and a switch are combined and connect repair paths among the basic units to efficiently repair a defective through silicon via which exists in a dense area by using a small number of redundant resources.

Three dimensional integrated circuit having redundant through silicon via base on rotatable cube

Disclosed are a stacked memory device and a method of repairing the same, in which spare cells for a post-bond test and repair process are disposed in a base die and the spare cells are used in each memory layer as many as the number desired, a repair result after the test is permanently stored, and the spare cell of the base die and the memory layer are simultaneously approached and meaningful data is selected, so that it is not necessary to newly perform a test even though power of a memory is blocked, it is possible to solve time wasted during an approach to a memory layer after a spare memory performs determination, and it is possible to secure a high repair rate.

Stacked memory device using base die spare cell and method of repairing the same

Disclosed is a three-dimensional integrated circuit divided into a plurality of groups and capable of repairing failed through-silicon vias (TSVs). In particular, the three-dimensional integrated circuit includes a plurality of through-silicon vias (TSVs) vertically penetrating the three-dimensional integrated circuit and included in each of the groups, and two or more redundant through-silicon vias (RTSVs), wherein, when the number of failed TSVs in one group exceeds a repairable number, the failed TSVs exceeding the repairable number are repaired using at least one RTSV included in another group adjacent to the group.

Three-dimensional integrated circuit

Growing community of inventors

Seoul, South Korea

Sungho Kang