Lg Display Co., Ltd.

Sunggu Kim

DaeHwan Kim

JeongSuk Yang

A thin film transistor and a display apparatus including the thin film transistor are discussed. The thin film transistor can include a light shielding layer on at least a portion of a substrate, a buffer layer on the light shielding layer, an active layer on the buffer layer, a gate insulating layer on the active layer, and a gate electrode on the gate insulating layer. A gate electrode opening can be disposed in the gate electrode and is formed by removing a portion of the gate electrode.

Thin film transistor and display apparatus comprising the same

A thin film transistor and a display apparatus comprising the same are provided, in which the thin film transistor comprises an active layer, a barrier layer on the active layer; a gate insulating layer on the barrier layer; and a gate electrode on the gate insulating layer, wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and the barrier layer includes an oxide semiconductor material and has a resistivity greater than a resistivity of the active layer and has a thickness less than a thickness of the active layer.

A display apparatus comprises a first signal line on a substrate, a second signal line intersecting with the first signal line, a first gate electrode, a first source electrode, a first drain electrode, and a second gate electrode disposed on the same layer as that of the first signal line, a first active layer spaced apart from the first gate electrode and partially overlapped with the first gate electrode, a second active layer spaced apart from the second gate electrode and partially overlapped with the second gate electrode, and a first electrode of a display device connected with the second active layer.

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Paju-si, South Korea

Sunggu Kim