Az Electronic Materials (Luxembourg) S.a.r.l.

Az Electronic Materials USA Corp.

Z Electronic Materials USA Corp.

Merck Patent Gmbh

SungEun Hong

Yi Cao

Hengpeng Wu

Jian Yin

Mark O Neisser

Margareta Paunescu

Muthiah Thiyagarajan

Guanyang Lin

Ralph R Dammel

Clement Anyadiegwu

Orest Polishchuk

Meng Li

Wenbing Kang

DongKwan Lee

The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where Rto Rare independently chosen from the group consisting of H and C-Calkyl; Ris chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C-C) and fluoroalkyl (C-C) and W is a C-Calkylene spacer.

Composition comprising a polymeric thermal acid generator and processes thereof

The present invention relates to novel processes for using the neutral layer compositions for aligning microdomains of directed self-assembling block copolymers (BCP). The processes are useful for fabrication of electronic devices. The novel processes comprise a step of forming a coating of the neutral layer from the neutral layer composition, wherein the neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl moiety, C-Cpartially fluorinated alkyl, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3.

Compositions of neutral layer for directed self assembly block copolymers and processes thereof

The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.

Methods and materials for removing metals in block copolymers

The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.

Composition for coating over a photoresist pattern

The present invention relates to a novel polymeric composition comprising a novel polymer having two or more repeat units and a terminus having the structure (1): wherein Rrepresents a C-Csubstituted or unsubstituted alkyl group, w is a number from 1-8, X is oxygen (O) or nitrogen (N), and Ris a reactive group. The invention also relates to a process for forming a pattern using the novel polymeric composition. The invention further relates to a process of making the novel polymer.

Neutral layer polymer composition for directed self assembly and processes thereof

The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl moiety, C-Cpartially fluorinated alkyl, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3.

The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where Ris independently selected hydrogen, C-Calkyl, C-Calkyl alcohol, hydroxy (OH), amine (NH), carboxylic acid, and amide (CONH),&#x2009;represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

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Basking Ridge, NJ, United States of America

SungEun Hong