Samsung Electronics Co., Ltd.

Hyundai Transys Incorporated

Sungchul Kim

SeungSik Kim

Haeyong Park

Jaeho Kim

Young Min Kim

Minwoong Seo

Jung Bin Yun

Kwang-Min Lee

Wonsok Lee

Uihui Kwon

Myung Hyun Jo

Jeonguk Kang

Sung-Hwan Jang

Seoksan Kim

Dogeun Kim

Kyu-dong Kim

Hyoungsoo Ko

Wonjoo Kim

Kyu Ha Shin

Sangjoon Hyung

Seokhee Hwang

Donghyeon Son

Jiseong Doh

A recliner for a vehicle seat includes a first gear having a collar part at a center thereof, a second gear being internally in contact with the first gear and configured to eccentrically engage with the first gear, a socket including a first coupling portion having an outer diameter portion coupled to be in contact with an inner diameter portion of the collar part, and a second coupling portion having an inner diameter portion coupled to surround an outer diameter portion of the collar part while being in contact with the outer diameter portion of the collar part, and a pair of wedge cams disposed between the socket and the second gear and configured to restrain or release the socket and the second gear.

Recliner for vehicle seat

A recliner for a vehicle seat includes a first gear having a collar part extending from a center of one surface, a second gear configured to eccentrically engage with the first gear while being internally in contact with the first gear, a ring member coupled to surround the collar part, a socket coupled to surround the ring member, and a pair of wedge cams disposed between the ring member and the second gear and configured to restrain or release the ring member and the second gear.

An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.

Image sensor

An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.

A semiconductor process simulation method includes classifying a semiconductor process simulation into a plurality of blocks based on an annealing simulation, performing a shape simulation corresponding to a block selected from the plurality of blocks, and performing at least two ion implantation simulations among a plurality of ion implantation simulations corresponding to the selected block in parallel, based on result data of the shape simulation corresponding to the selected block.

Semiconductor process simulation device and simulation method thereof

Provided is an image sensor including a semiconductor substrate having a trench and having a first conductivity type, a photoelectric conversion layer formed in the semiconductor substrate below the trench to have a second conductivity type, first and second transfer gate electrodes provided in the trench covered with a gate insulating layer, a first charge-detection layer formed in the semiconductor substrate adjacent to the first transfer gate electrode, and a second charge-detection layer formed in the semiconductor substrate adjacent to the second transfer gate electrode.

Image sensors having transfer gate electrodes in trench

A display system may include a system board configured to compare image signals of a current and previous frame and configured to output the image signals of the current frame and a comparison result; a display panel configured to receive data signals in response to gate signals and configured to include pixels for displaying images corresponding to the data signals; a timing controller configured to output image signals and control signals; a gate driving unit configured to provide the gate signals to the pixels in response to the control signals; and/or a data driving unit configured to store the image signals provided from the timing controller and configured to convert the image signals into the data signals in response to the control signals, the data signals being provided to the pixels.

Display systems for reducing power consumption and methods for driving the same

A hibernation method of a computing system that includes generating backup data and write addresses according to at least a portion of data utilized by the computing system at a hibernation request, generating conversion addresses corresponding to a first non-volatile memory when the write addresses correspond to a second non-volatile memory, and storing the backup data in the first non-volatile memory according to either the write addresses or the conversion addresses.

Computing system and hibernation method thereof

A data storage device and a data storing method thereof, including first main memories coupled to a plurality of channels, second main memories coupled to the plurality of channels in common, a buffer memory temporarily storing data to be programmed to the first and the second main memories; and a controller configured to program data of victim cache lines from the buffer memory to the second main memories while data of a first victim cache line from the buffer memory is being programmed to the first main memories. The storing method includes that a victim cache line is selected based on cost-based page replacement.

Growing community of inventors

Hwaseong-si, South Korea

Sungchul Kim