Intel Corporation

Sungbong Park

Ansheng Liu

John Heck

Olufemi I Dosunmu

Mark Isenberger

Harel Frish

Wei Qian

Lina He

Kelly Christopher Magruder

Seth M Slavin

Nutan Gautam

Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

Integrated photonic transceiver

Embodiments described herein relate to techniques and configurations associated with a photonic apparatus (e.g., PIC) having a photodiode and a bypass capacitor disposed in a channel. In one instance, the apparatus includes a substrate in which at least first and second channels are formed. The first channel includes a first photodiode and a first capacitor coupled to the first photodiode, and the second channel includes a second photodiode and a second capacitor coupled with the second photodiode. The first and second capacitors are provided to assist with biasing the first and second photodiodes respectively and to isolate a signal output by the first and second photodiodes from interference provided by the power supply associated with the apparatus. Additional embodiments can be described and claimed.

Integrated circuit comprising multiple channels with integrated bypass capacitors and photodiodes

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Santa Clara, CA, United States of America

Sungbong Park