United Microelectronics Corp.

Sung-Yuan Tsai

Yu-Ren Wang

Chun-Wei Yu

Kuang-Hsiu Chen

Chi-Hsuan Tang

Yu-Ying Lin

Yi-Liang Ye

Zhen Wu

Tai-Yen Lin

Bin-Siang Tsai

Da-Jun Lin

Ting-An Chien

Shih-Wei Su

Shi-You Liu

Hsu Ting

Hao-Hsuan Chang

Chih-Wei Chang

Yao-Hsien Chung

Chao-Nan Chen

Kai-Hsiang Wang

A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure and an epitaxial structure. The gate structure is disposed on the substrate, and the epitaxial structure is disposed in the substrate, at one side of the gate structure. The epitaxial structure includes a portion being protruded from a top surface of the substrate, and the portion includes a discontinuous sidewall, with a distance between a turning point of the discontinuous sidewalls and the gate structure being a greatest distance between the epitaxial structure and the gate structure.

Method of fabricating semiconductor device having epitaxial structure

A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.

Fabricating method of reducing photoresist footing

Semiconductor device having epitaxial structure

A semiconductor device is disclosed. The semiconductor device comprises a substrate, a gate structure disposed on the substrate, a spacer disposed on the substrate and covering a sidewall of the gate structure, an air gap sandwiched between the spacer and the substrate, and a source/drain region disposed in the substrate and having a faceted surface exposed from the substrate, wherein the faceted surface borders the substrate on a boundary between the air gap and the substrate.

Semiconductor device and method for forming the same

A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

Growing community of inventors

Yunlin County, Taiwan

Sung-Yuan Tsai