Samsung Electronics Co., Ltd.

Seoul National University

Cheil Industries Inc.

Sung Young Yun

Gae Hwang Lee

Yong Wan Jin

Kyung Bae Park

Chul Joon Heo

Dong-Seok Leem

Kwang Hee Lee

Seon-Jeong Lim

Yeong Suk Choi

Taejin Choi

Sung Jun Park

Tadao Yagi

Xavier Bulliard

Takkyun Ro

Youn Hee Lim

Feifei Fang

Hyesung Choi

Hiromasa Shibuya

Chul Baik

Rie Sakurai

Hye Rim Hong

Moon Gyu Han

Jisoo Shin

Chui Joon Heo

Ji Soo Shin

Hyeong-Ju Kim

Jeong Il Park

Norihito Ishii

Katsunori Shibata

Bulliard Xavier

Hyeongju Kim

Soo Young Park

Sang Mo Kim

Soo-Ghang Ihn

In Sun Park

Ji Eon Kwon

Jong Won Choi

Sakurai Rie

Tatsuya Imase

Ohkyu Kwon

Jong Hwan Park

Seok-Hwan Hong

Chul-Joon Heo

Daiki Minami

Seyoung Jung

Yeon Ji Chung

Dong Joo Min

Hwijoung Seo

Eun Kyung Lee

Sung Han Kim

Kyung-bae Park

Kyu Sik Kim

Yutaka Matsuo

Dal-Ho Huh

Hyung Rang Moon

Masaru Ishii

Don-Wook Lee

Hyun Bum Kang

Ryuichi Satoh

Jin Min Cheon

Sang Chul Sul

Jeoungin Yi

Naotoshi Suganuma

Sung Dong Suh

Chuljoon Heo

Chui Baik

Yagi Tadao

Juhyung Lim

Min-Woo Choi

Hye Sung Choi

An organic photodiode includes a first electrode including a reflective layer, a second electrode including a semi-transmissive layer, a photoelectric conversion layer between the first electrode and the second electrode and including an organic light absorbing material, and a buffer layer that is at least one of between the reflective layer and the photoelectric conversion layer or between the semi-transmissive layer and the photoelectric conversion layer. The organic photodiode is configured to exhibit at least three external quantum efficiency (EQE) spectra in a wavelength region of about 380 nm to about 3000 nm and each EQE spectrum of the at least three EQE spectra has a full width at half maximum of about 2 nm to about 100 nm.

Organic photodiode, sensor, camera, and electronic device

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Compound and photoelectric device, image sensor, and electronic device including the same

An image sensor includes first and second organic photoelectric conversion devices stacked in a vertical direction and configured to selectively absorb light in a part of visible wavelength spectrum and non-selectively absorb light in the visible wavelength spectrum, respectively. The first organic photoelectric conversion device may selectively absorb light in a blue wavelength spectrum, and the second organic photoelectric conversion device may selectively absorb light in a green wavelength spectrum. The image sensor may have stacked organic photoelectric conversion devices configured to selectively absorb light in a red wavelength spectrum and a green wavelength spectrum, respectively.

Image sensors and image processing apparatus and electronic devices

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound. In Chemical Formula 1, X, X, X, Ar, L, A, R, and Rare the same as in the specification.

Compound and sensor and sensor embedded display panel and electronic device

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and/or an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Sensor embedded display panel and electronic device

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Sensor-embedded display panel and electronic device

Disclosed are an n-type semiconductor including compound represented by Chemical Formula 1 or Chemical Formula 2, an image sensor, and an electronic device. In Chemical Formula 1 and Chemical Formula 2, each substituent is as defined in the detailed description.

N-type semiconductor, and organic photoelectric device, image sensor, and electronic device including the same

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

Photoelectric conversion device and sensor and electronic device

A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Photoelectric devices having charge transport layer including first charge transport material and second charge transport material and sensors and electronic devices

A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, and an image sensor and an electronic device including the same: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Composition for photoelectric device, and image sensor and electronic device including the same

An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

Image sensors and electronic devices

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, the definition of each group and parameter is as described in the detailed description.

Growing community of inventors

Suwon-si, South Korea

Sung Young Yun