Samsung Electronics Co., Ltd.

Siltron, Inc.

Sung-Young Lee

Eun-jung Yun

Dong-won Kim

Min-sang Kim

Dong-Gun Park

In-Hyuk Choi

Sung-Min Kim

Ji-myoung Lee

Tae-Hwan Kang

Ki-Deuk Kim

Dong-Won Kim

Yang-Kyu Choi

Sung-min Kim

Min-Su Jung

Hong-Moon Chun

Yong-Seok Lee

Sang-Hyeon Kim

Jin-A Mock

Jung-Woong Hyun

Eunjung Yun

Hyun-Jun Kwon

Sung-Dae Suk

Jung Woong Hyun

Lee-Eun Yu

Hyon-Jong Cho

Ju-hyun Kim

Hong-Woo Lee

Donggun Park

Chang-Hoon Kim

Yunjae Jun

Jung-Ho Chun

Young-Ho Hong

Seung-Ho Shin

Dong-Jin Seo

An electronic device is provided. The electronic device includes a support member including at least a portion formed of a conductive material, an enclosure member configured to receive the support member and including at least a portion of which is formed of a conductive material. The conductive material portion of the enclosure member and the conductive material portion of the support member are insulated from each other.

Electronic device and method for manufacturing the same

According to various embodiments of the present disclosure, there is provided a storage medium accommodation device and an electronic device including the same. The storage medium accommodation device may include: a head; a first tray withdrawably introduced into an electronic device and configured to accommodate a first storage medium; a second tray provided between the head and the first tray to be withdrawably introduced into the electronic device, and configured to accommodate a second storage medium; first and second guides respectively provided on the first and second trays, and moved in a sliding manner such that the first and second trays can be introduced into/drawn out from the electronic device; and locking portions respectively included in the first and second guides and configured to restrict the sliding movement of the first and second guides such that the first and second trays can be selectively introduced/drawn out. Other embodiments may also be made.

Storage medium accommodation device and electronic device including the same

An electronic device including a front cover, a back cover, and a sidewall configured to surround at least a part of an internal space formed between the front and back covers. Disposed in the space is a rear case including a first conductive connecting member formed therein; a first space formed between the back cover and the rear case; and a second space formed between the front cover and the rear case, the second space configured to be hermetically sealed from the first space. An electrical connecting member includes a first part disposed in the first space, a second part that extends to a surface of a non-conductive structure, and a third part electrically contacting the first conductive connecting member. A printed circuit board disposed within the second space is electrically connected with the first conductive connecting member. The sidewall may comprise an opening configured to receive a side key.

Electronic device having waterproof structure

According to various embodiments of the present disclosure, an electronic device may include: an external housing having a through-hole that connects the inside and the outside of the portable electronic device; a first structure that is accommodated in a space of the external housing and has an opening and a passage, wherein the opening is disposed adjacent to the through-hole and the passage extends in a first direction and is connected to the opening; a second structure that is accommodated in the space of the external housing and disposed adjacent to the first structure, and has a portion directed toward the through-hole; and a material that is located on the portion of the second structure so as to be visible from the outside through the through-hole and changes color in reaction to contact of a fluid. In addition, various other embodiments can be made.

Electronic device having through-hole formed therein

An apparatus for mounting in a secure manner a stylus pen in an information device, in which there are a casing and the stylus pen. A guide unit having an inlet and an outlet is configured to have an opened top at the inlet and a closed bottom at the outlet, extended along a length direction of the casing, for accommodating the stylus pen.

Apparatus for mounting stylus pen in an information device

The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.

Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot

Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap.

Molecular devices and methods of manufacturing the same

A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever electrodes, and first and second upper word lines on the first and second trap sites.

Method of manufacturing multibit electro-mechanical memory device having movable electrode

A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.

Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same

Multibit electro-mechanical memory device having cantilever electrodes

In a memory device and a method of forming the same, in one embodiment, the memory device comprises a first word line structure on a substrate, the first word line structure extending in a first direction. A bit line is provided over the first word line structure and spaced apart from the first word line by a first gap, the bit line extending in a second direction transverse to the first direction. A second word line structure is provided over the bit line and spaced apart from the bit line by a second gap, the second word line structure extending in the first direction. The bit line is suspended between the first word line structure and the second word line structure such that the bit line deflects to be electrically coupled with a top portion of the first word line structure through the first gap in a first bent position and deflects to be electrically coupled with a bottom portion of the second word line structure through the second gap in a second bent position, and is isolated from the first word line structure and the second word line structure in a rest position.

Electromechanical memory devices and methods of manufacturing the same

A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line in a first direction on the substrate, a lower word line in a second direction intersecting the first direction, a pad electrode isolated from a sidewall of the lower word line and connected to the bit line, a cantilever electrode expending in the first direction over the lower word line with a lower void therebetween, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a trap site expending in the second direction over the cantilever electrode with an upper void therebetween, and an upper word line to which a charge to curve the cantilever electrode in a direction of the trap site is applied, and on the trap site.

Multibit electro-mechanical device and method of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Sung-Young Lee