Korea Advanced Institute of Science and Technology

Samsung Electronics Co., Ltd.

Other

Sung Yoon Chung

Yong Sun Ko

Yoon Ho Son

Im Soo Park

Jae Uk Shin

Suk-Joong L Kang

Si Kyung Choi

Ho Yong Lee

Byung Kee Lee

Suk Joong Kang

Byung Sung Kang

Ju Mi Bak

Suk Pil Kim

Hye In Yoon

Gi Young Jo

Yang Il Jung

Semiconductor devices and methods of forming the same are provided. The methods may include forming first and second line patterns. The first line pattern has a first side facing the second line pattern, and the second line pattern has a second side facing the first line pattern. The methods may also include forming a first spacer structure on the first side of the first line pattern and a second spacer structure on the second side of the second line pattern. The first and the second spacer structures may define an opening. The methods may further include forming a first conductor in a lower part of the opening, forming an expanded opening by etching upper portions of the first and second spacer structures, and forming a second conductor in the expanded opening. The expanded opening may have a width greater than a width of the lower part of the opening.

Semiconductor devices including enlarged contact hole and methods of forming the same

Disclosed is a catalyst having a perovskite structure in the form of ABO, in which the number of ion moles at the A site has an excess ratio compared to the number of ion moles at the B site. The present invention exhibits an oxygen catalytic activity improved by about 3 times in an oxygen evolution reaction and by about 40% in an oxygen reduction reaction, compared to those of an existing LaNiOperovskite catalyst. Further, since the metallic conductivity is not significantly changed compared to the existing LaNiOperovskite oxide, there is an advantage in that a carbon support need not be used when the present invention is used as a catalyst in a battery positive electrode.

Perovskite oxide catalyst having improved oxygen catalytic activity and preparation method thereof

Provided is a method for preparing a grain boundary insulation-type dielectric. The method includes the steps of obtaining a titanic acid compound and a ferroelectric having a value less than a melting point of the titanic acid compound; obtaining a mixture by adding the ferroelectric material to the titanic acid compound; and sintering the mixture at a temperature equal to or more than a melting point of the ferroelectric material.

Non-ferroelectric high dielectric and preparation method thereof

Provided are lithium transition metal phosphates where the cation anti-site defects between lithium and transition metals in a lithium transition metal phosphate with a cation well-ordered olivine structure are arranged only in a 1D crystal direction, and a method of preparing the same. The method comprises adding any one selected from the group consisting of an alkali element and an element that has a valence of 5or any combination thereof to a solid salt comprising lithium, transition metals, and phosphorus as a starting material to produce a first intermediate material; subjecting the first intermediate to a first heat treatment at a temperature of approximately 250&#xb0; C. to approximately 400&#xb0; C. to produce a second amorphous material; and cooling the second intermediate material to room temperature, followed by a second heat treatment at a temperature of approximately 400&#xb0; C. to approximately 800&#xb0; C. to produce a final material in which the cation-distribution defect is locally clustered and the distribution has a 1D-oriented arrangement parallel to any one axis direction in the crystal.

Method of preparing nanoparticles of lithium transition metal phosphates, lithium transition metal phosphates, and method of preparing the same

A process for preparing a nanoparticle powder of a lithium transition metal phosphate includes mixing lithium, a transition metal and a phosphorus-containing salt as starting materials, adding an additive to the starting materials in an amount of greater than 0 at % and less than 10 at % to obtain a mixed raw material powder, subjecting the mixed powder to a first heat treatment at a temperature of 250&#xb0; C. to 400&#xb0; C. under a gas atmosphere for 2 to 10 hours; and subjecting the first heat-treated product to a second heat treatment at a temperature of 400&#xb0; C. to 700&#xb0; C. for 2 to 24 hours to uniformly form crystalline nuclei so as to induce growth of nanocrystalline particles. The additive may be any one element selected from the group consisting of sodium (Na), potassium (K), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), gadolinium (Gd) and erbium (Er).

Method for making nanoparticles of lithium transition metal phosphates

Disclosed is a method for preparing heteroepitaxial thin films which are free of island structures which have a bad influence on the photoelectric properties and interfacial reactivity of the thin films. These heteroepitaxial thin films are deposited on grooved or curved surfaces of substrates. The use of grooved substrates relieves the coherent elastic strain from the thin films, thereby inhibiting the surface roughening and the island structure formation in the heteroepitaxial thin films. The method can be applied to all of the thin films that show island structures, including GaAs/Si and SiGe/Si typically used in semiconductor devices and various electronic parts, enabling the thin films to be flatly deposited at a significant thickness on various substrates without additionally processing.

Method for preparing heteroepitaxial thin film

A method for making a BaTiO -based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO -based body is subjected to a pre-heat treatment in a hydrogen (H ) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen&equals;5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO . By virtue of the reducing average grain size of BaTiO , a BaTiO -based dielectric having a high dielectric constant and a low dielectric loss is obtained. This method provides an advantage in that it is possible to make a BaTiO -based dielectric having a very small average grain size while having a high relative density in accordance with a simple heat treatment conducted for pure BaTiO or even for BaTiO added with an additive in a reducing atmosphere at a temperature less than a liquid phase forming temperature, prior to a sintering process for sintering the BaTiO .

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Seoul, South Korea

Sung Yoon Chung