Massachusetts Institute of Technology

Korea Advanced Institute of Science and Technology

Ceracomp Co., Ltd.

Samsung Electronics Co., Ltd.

Pantech & Curitel Communications, Inc.

Sung-Yoon Chung

Yet-Ming Chiang

Jason T Bloking

Anna M Andersson

Ho-Yong Lee

Tae-Moo Hur

Suk-Joong L Kang

Doe-Yeon Kim

Byoung-Ki Lee

Nong-Moon Hwang

Won-Jun Lee

Jin-Hye Bae

Jong-Bong Lee

Taek-Dong Chung

Jong-Hong Lee

Seong-Min Wang

Jae-Suk Kim

Moo-cheol Ryoo

Ji-Sang An

Jao-Suk Kim

Provided are a dielectric material, a device including the same, and a method of preparing the dielectric material. The dielectric material includes a polycrystalline oxide including a plurality of crystal grain bulks and grain boundaries located between the plurality of crystal grain bulks, and the polycrystalline oxide includes an indium dopant in the grain boundaries.

Dielectric material, device including the same, and method of preparing the dielectric material

In a method of detecting an etch by-product, the method including forming a magnetic layer including palladium (Pd) on a substrate; etching the magnetic layer to form a magnetic layer pattern; depositing a mixture including an alkyl bromide compound on a surface of the magnetic layer pattern; and measuring a current difference between the substrate and the mixture to detect an etch by-product on the surface of the magnetic layer pattern.

Methods of detecting an etch by-product and methods of manufacturing a magnetoresistive random access memory device using the same

A compound comprising a composition A(M'M&#x2033;)(XD), A(M&#x2032;M&#x2033;)(DXD), or A(M&#x2032;M&#x2033;)(XD), (AM&#x2033;)M&#x2032;(XD), (AM&#x2033;)M&#x2032;(DXD), or (AM&#x2033;)M&#x2032;(XD). In the compound, A is at least one of an alkali metal and hydrogen, M&#x2032; is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M&#x2033; any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001&#x3c;a&#x2266;0.1, and x, y, and z are greater than zero. The compound can be used in an electrochemical device including electrodes and storage batteries.

Conductive lithium storage electrode

A compound comprising a composition A(M'M&#x2033;)(XD), A(M&#x2032;M&#x2033;)(DXD), or A(M&#x2032;M&#x2033;)(XD), and have values such that x, plus y(1&#x2212;a) times a formal valence or valences of M&#x2032;, plus ya times a formal valence or valence of M&#x2033;, is equal to z times a formal valence of the XD, XD, or DXDgroup; or a compound comprising a composition (AM&#x2033;)M&#x2032;(XD), (AM&#x2033;)M&#x2032;(DXD)(AM&#x2033;)M&#x2032;(XD)and have values such that (1&#x2212;a)plus the quantity ax times the formal valence or valences of M&#x2033; plus y times the formal valence or valences of M&#x2032; is equal to z times the formal valence of the XD, XDor DXDgroup. In the compound, A is at least one of an alkali metal and hydrogen, M&#x2032; is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M&#x2033; any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001&#x3c;a&#x2266;0.1, and x, y, and z are greater than zero. The compound can have a conductivity at 27&#xb0; C. of at least about 10S/cm. The compound can be a doped lithium phosphate that can intercalate lithium or hydrogen. The compound can be used in an electrochemical device including electrodes and storage batteries and can have a gravimetric capacity of at least about 80 mAh/g while being charged/discharged at greater than about C rate of the compound.

The present invention relates to a method for manufacturing a SrTiOseries varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiOseries varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiOseries varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

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A mobile communication terminal having a malfunction-preventing function is provided, including a keypad; a voltage source which is activated by voltage supplied to an EN terminal, processes voltage supplied from a battery, and outputs the processed voltage; a power_on switching unit switched on when a switch_on key of the keypad is pressed; a charging terminal supplying voltage supplied upon charging to the EN terminal; a malfunction-preventing unit preventing voltage from being supplied from the charging terminal to the EN terminal while a control signal is input; and a controller which is activated by voltage supplied from the voltage source during a power-off condition, controls the mobile communication terminal by supplying voltage to the EN terminal of the voltage source and receiving voltage from the voltage source, and outputs a control signal to the malfunction-preventing unit only when a power-off process is performed according to a power-off instruction from the keypad.

Mobile communications terminal having malfunction-preventing function

A compound comprising a composition A(M'M&#x2033;)(XD), A(M&#x2032;M&#x2033;)(DXD), or A(M&#x2032;M&#x2033;)(XD), and have values such that x, plus y(1-a) times a formal valence or valences of M&#x2032;, plus ya times a formal valence or valence of M&#x2033;, is equal to z times a formal valence of the XD, XD, or DXDgroup; or a compound comprising a composition (AM&#x2033;)M&#x2032;(XD), (AM&#x2033;)M&#x2032;(DXD)(AM&#x2033;)M&#x2032;(XD)and have values such that (1-a)plus the quantity ax times the formal valence or valences of M&#x2033; plus y times the formal valence or valences of M&#x2032; is equal to z times the formal valence of the XD, XDor DXDgroup. In the compound, A is at least one of an alkali metal and hydrogen, M&#x2032; is a first-row transition metal, X is at least one of phosphorus, sulfur, arsenic, molybdenum, and tungsten, M&#x2033; any of a Group IIA, IIIA, IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, VB, and VIB metal, D is at least one of oxygen, nitrogen, carbon, or a halogen, 0.0001&#x3c;a&#x2266;0.1, and x, y, and z are greater than zero. The compound can have a conductivity at 27&#xb0; C. of at least about 10S/cm. The compound can be a doped lithium phosphate that can intercalate lithium or hydrogen. The compound can be used in an electrochemical device including electrodes and storage batteries and can have a gravimetric capacity of at least about 80 mAh/g while being charged/discharged at greater than about C rate of the compound.

The invention relates to a method for growing single crystals of barium titanate &lsqb;BaTiO &rsqb; and barium titanate solid solutions &lsqb;(Ba M )(Ti N )O &rsqb;. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention is also applicable to other material systems showing abnormal grain growth behavior.

Method for single crystal growth of barium titanate and barium titanate solid solution

The invention relates to a method for growing single crystals of barium titanate &lsqb;BaTiO &rsqb; and barium titanate solid solutions &lsqb;(Ba M )(Ti N )O &rsqb;. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of barium titanate and barium titanate solid solutions according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.

Growing community of inventors

Seoul, South Korea

Sung-Yoon Chung