Skhynix Inc.

Sung Yoon Cho

Eun Mi Kim

Byung Soo Park

Hae Jung Lee

A non-volatile memory device according to an aspect of the present disclosure includes a substrate, a plurality of word lines stacked over the substrate and having a stepwise pattern, wherein the plurality of word lines each have a pad region, and a plurality of contact plugs coupled to the respective pad regions of the word lines, wherein a width of a pad region of a first one of the plurality of word lines is greater than a width of a pad region of a second word line lower than the first word line.

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Gyeonggi-do, South Korea

Sung Yoon Cho