Hynix Semiconductor Inc.

Samsung Electronics Co., Ltd.

Sung-Yoon Cho

Hae-Chul Lee

Sung-Kwon Lee

Jun-Hyeub Sun

Hye-Ran Kang

Sung-soo Kim

Dong-hyun Kim

Jong-han Lim

Seong-Wook Song

Joo-Hyun Do

Heun-Chul Lee

Jong-Han Lim

Chang-Goo Lee

Bum-Jin Jun

A wireless communication method includes: receiving a wireless signal including a plurality of frames, wherein each of the plurality of frames includes a plurality of sub-frames and a current frame is initially a first one of the frames; a) performing a correlation calculation between each of the sub-frames of the current frame and each a plurality of reference signals to generate a plurality of current correlation values; b) respectively accumulating the current correlation values with previous correlation values to generate cumulative values respectively corresponding to the plurality of sub-frames of the current frame; determining whether an effective synchronization signal is detected, based on the current cumulative values; and setting the current frame to a next one of the frames, setting the previous correlational values to the current correlation values, and determining whether to resume to step a) based on the determination as to whether the effective synchronization signal is detected.

Wireless communication apparatus including synchronization signal detector and cell searching method thereof

A chip for detecting a synchronization signal generated based on one of a plurality of sequences, which is generated by a sequence generator, the chip including a memory, and a processor connected to the memory may be provided. The processor may be configured to receive the synchronization signal, perform first descrambling the received synchronization signal for a first sequence from among the plurality of sequences by multiplying the received synchronization signal by the first sequence, and perform second descrambling the received synchronization signal for a second sequence, which is a complex conjugate of the first sequence, from among the plurality of sequences of the received synchronization signal by changing a sign of at least one element of a descrambled sequence of the first sequence.

Method and apparatus for detecting synchronization signal

Methods and apparatuses are provided for determining an interference transmission mode (TM) at a communication device in a cellular communication system using a resource element (RE) defined by frequency and time. A first signal is received in one RE. The first signal comprises a serving signal and an interference signal. A first vector of the received first signal is projected onto each of N projection vectors. A traffic-to-pilot ratio (TPR) decision metric of the interference signal is determined by using N pairs of an actual squared value and an expected squared value which are corresponding to the projected first vector. A TM of the interference signal is detected by determining a TF of the interference signal which minimizes the TPR decision metric from among predetermined transmit format (TF) candidates.

Method and apparatus for blind detecting a transmission mode for interference cancellation

A method and apparatus are provided for extracting interference signal information. The method includes demodulating control channel signals received from serving and adjacent cells; decoding the control channel signals received from the serving cell to extract control information; decoding the control channel signals received from the adjacent cell; extracting, at each subframe, from the decoded control channel signals received from the adjacent cell, a terminal ID of the adjacent cell; accumulating the extracted terminal IDs; filtering only a control channel signal from among the control channel signals received from the adjacent cell corresponding to a terminal ID having an accumulation count that is greater than or equal to a threshold; determining a reliability value of the filtered control channel signal; identifying the filtered control channel signal as a first interference signal, based on the reliability value; and extracting interference signal information based on the first interference signal.

Method for extracting interference signal information and apparatus for the same

A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer over an etch target layer, forming first etch mask patterns having negative slopes over the first hard mask layer, thereby forming a resultant structure, forming a first material layer for a second etch mask over the resultant structure, performing a planarization process until the first etch mask patterns are exposed to form second etch mask patterns filled in spaces between the spacers, removing the spacers, and etching the first hard mask layer and the etch target layer using the first etch mask patterns and the second etch mask patterns.

Method for forming fine patterns in semiconductor device

A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer and a second hard mask layer over an etch target layer, forming second hard mask patterns by etching the second hard mask layer, wherein an etching profile of the second hard mask layer has a positive slope, and etching the first hard mask layer and the etch target layer using the second hard mask patterns as an etch mask.

Method for forming fine patterns using etching slope of hard mask layer in semiconductor device

A method for forming a capacitor in a semiconductor device comprises forming an inter-layer layer on a semi-finished substrate; etching the inter-layer insulation layer to form a plurality of first contact holes; forming a first insulation layer on sidewalls of the first contact holes; forming a plurality of storage-node contact plugs filled into the first contact holes; forming a second insulation layer with a different etch rate from the first insulation layer over the storage-node contact plugs; forming a third insulation layer on the second insulation layer; sequentially etching the third insulation layer and the second insulation layer to form a plurality of second contact holes exposing the storage-node contact plugs; and forming the storage node on each of the second contact holes.

Method for forming storage node of capacitor in semiconductor device

A method for fabricating a nonvolatile memory device includes repeatedly stacking a stacked structure over a substrate to form a multi-stacked structure, wherein the stacked structure includes a conductive layer and an insulation layer, forming a photoresist pattern over the multi-stacked structure, first-etching an uppermost stacked structure of the multi-stacked structure using the photoresist pattern as an etch barrier, second-etching a resultant structure formed by the first-etching through the use of a breakthrough etching, slimming the photoresist pattern to form a slimmed photoresist pattern, and third-etching the uppermost stacked structure using the slimmed photoresist pattern as an etch barrier and, at the same time, etching a stacked structure disposed under the uppermost stacked structure and exposed by the first-etching.

Method for fabricating nonvolatile memory device

Disclosed is a method for fabricating a gate of semiconductor device. The disclosed comprises the steps of: sequentially forming a gate oxide layer, a gate material layer and a mask oxide layer on a semiconductor substrate; coating photopolymer having compound accelerator including polar functional group which absorbs HF vapor and ionize at a predetermined high temperature on the mask oxide layer; exposing the photopolymer and cross-linking the portion of exposed photopolymer; performing DFVP process by passing over HF vapor on the resultant substrate at a predetermined high temperature, thereby developing the portion of exposed photopolymer and etching the portion of mask oxide layer exposed by development of photopolymer simultaneously; removing the residual photopolymer; and etching the gate material layer and the gate oxide layer using the etched mask oxide layer.

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Seoul, South Korea

Sung-Yoon Cho