Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Konkuk University Industrial Cooperation Corp

Sung Yool Choi

Chan Woo Park

Han Young Yu

Ung Hwan Pi

Tae Hyoung Zyung

Kyoung Ik Cho

Sang Ouk Ryu

Hak Seong Kim

Jin Ho Lee

Seung Youl Kang

Yoon Ho Song

Seong Jae Lee

Hyun Cheol Kim

Hyoyoung Lee

Min Ki Ryu

Jong Heon Yang

Chang Geun Ahn

In Bok Baek

Mun Seok Jeong

Ki Ju Im

Hyun Jong Chung

Han Byeol Lee

Byung Chui Jang

Provided is a memory- and logic device-integrated soft electronic system, the memory- and logic device-integrated soft electronic system including: a substrate; a plurality of bar-shaped first electrodesstacked on the substrate; a resistance-variable material layercoated on the lower electrode; and a plurality of bar-shaped second electrodesstacked on the resistance-variable material layer, wherein the first electrode and the second electrode cross each other.

Memory and logic device-integrated soft electronic system

Disclosed are a two-dimensional semiconductor in which an energy band gap changes with thickness, a manufacturing method therefor, and a semiconductor device comprising the same. A two-dimensional semiconductor according to an embodiment comprises: a first layer having a first thickness; and a second layer having a second thickness, wherein the first thickness and the second thickness are different from each other, the first layer forms a first junction with a first electrode, and the second layer forms a second junction with a second electrode.

Two-dimensional semiconductor, manufacturing method therefor, and semiconductor device comprising same

Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.

Method of manufacturing nano size-gap electrode device

A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.

Tri-gated molecular field effect transistor and method of fabricating the same

Provided is a method for manufacturing a nano-gap electrode device comprising the steps of: forming a first electrode on a substrate; forming a spacer on a sidewall of the first electrode; forming a second electrode on an exposed substrate at a side of the spacer; and forming a nano-gap between the first electrode and the second electrode by removing the spacer, whereby it is possible to control the nano-gap position, width, shape, and etc., reproducibly, and manufacture a plurality of nano-gap electrode devices at the same time.

Method for manufacturing nano-gap electrode device

Derivatives of 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol and method for preparing the same

A field emission device using carbon nanotubes grown in a direction parallel to a substrate and a method of manufacturing a high definition field emission display using an edge emitting luminescent thin film. The device includes a process of selectively depositing a metal catalyst on a sidewall of the pattern to grow the carbon nanotube in a direction parallel to the metal catalyst and a process of attaching the grown carbon nanotube on the main board by application process, so that it can be freely applied in a subsequent process. The device employs a carbon nanotube field emission emitter and an edge emitting in a high fine luminescent body deposited in a thin film type. Thus, a close relationship with the substrate can be maintained due to the horizontally grown carbon nanotubes, a subsequent semiconductor process can be freely applied using a thin film type luminescent body, and a high fine field emission display can be thus manufactured.

Field emission devices using carbon nanotubes and method thereof

A field emission display device is disclosed. The device comprises an upper plate and a lower plate that are vacuum-packaged in parallel, wherein the lower plate is composed of matrix-addressable pixels, wherein the pixel formed on an insulation substrate comprises a field emitter array, a control thin-film transistor having a drain connected to an emitter electrode of the emitter array, and an addressing thin-film transistor having a drain connected to a gate electrode of the control thin-film transistor. Designing the control thin-film transistor to have a large parasitic capacitance between the source and the gate, one can obtain an active matrix display having a memory function and eliminate a conventional complex fabricating process of a memory capacitor, thereby simplify a panel fabricating process remarkably and largely increase the aperture ratio of a pixel. Furthermore, in the present invention, introducing glass for a substrate material instead of conventional single crystal silicon wafer, one can cheaply produce a large size panel and easily carry out a vacuum packaging that is indispensable for fabricating a field emission display.

Field emission display device

Growing community of inventors

Daejeon, South Korea

Sung Yool Choi