Samsung Electronics Co., Ltd.

Kepco Nuclear Fuel Co., Ltd.

Korea Advanced Institute of Science and Technology

Sung Yong Lee

Sang Ho Kim

Yoon Ho Kim

Hun Jang

Seung Jae Lee

Dae Yong Kim

Yong Kyoon Mok

Min Young Choi

Sun Kyu Lee

Dae Gyun Ko

Tae Hwang Kong

Gyu Hyeong Cho

Chung Yong Lee

Tae-Hwang Kong

Jong Sung Yoo

Yeon Soo Na

Jae Ik Kim

Changheui Jang

Tae Sik Jung

Hyunmyung Kim

Chaewon Kim

Dae Gyun Go

Min Woo Ko

A semiconductor circuit includes a first selection circuit which selects a first battery or a first capacitor, a second selection circuit which selects a second battery or a second capacitor, a voltage measuring circuit which measures a first voltage of the first battery or the first capacitor selected by the first selection circuit, and measures a second voltage of the second battery or the second capacitor selected by the second selection circuit, a controller which compares the first voltage and the second voltage to generate a comparison result, and a switching circuit which receives a signal based on a target output voltage, connects the first battery or capacitor selected by the first selection circuit, and the second battery capacitor selected by the second selection circuit in an interconnection relationship based on the comparison result to provide to an output terminal an output voltage responsive to the target output voltage.

Semiconductor circuit for balancing energy sources

Embodiments of the disclosure relate to a ferritic alloy having excellent ability to withstand nuclear power plant accidents and a method of manufacturing a nuclear fuel cladding tube using the same. The alloy includes iron (Fe), aluminum (Al), chromium (Cr), and nickel (Ni). The nickel (Ni) may be included 0.5 to 10 wt % based on a total amount of the alloy. The chromium may be included 13 to 18 wt % based on the total amount of the alloy. The aluminum may be included 5 to 7 wt % based on the total amount of the alloy.

Ferritic alloy and method of manufacturing nuclear fuel cladding tube using the same

A method of manufacturing a zirconium alloy for a nuclear fuel cladding tube includes melting a mixture of 0.5 wt % of Nb, 0.4 wt % of Mo, 0.1 to 0.15 wt % of Cu, 0.15 to 0.2 wt % of Fe, and a balance of zirconium to prepare a melted ingot; heat treating the melted ingot at 1,000 to 1,050&#xb0; C. for 30 to 40 min. followed by quenching in water to prepare a heat-treated ingot; preheating the heat-treated ingot at 630 to 650&#xb0; C. for 20 to 30 min. to prepare a preheated ingot followed by hot rolling the preheated ingot at a reduction ratio of 60 to 65% to provide a hot-rolled material; thrice performing vacuum annealing followed by cold-rolling; and vacuum annealing a third cold-rolled material in a final vacuum annealing at 510 to 520&#xb0; C. for 7 to 9 hrs. to provide the zirconium alloy as a cold-rolled material.

Method of manufacturing a corrosion-resistant zirconium alloy for a nuclear fuel cladding tube

A device for maintaining the internal temperature of a pressure vessel. The device includes a pressure vessel equipped with a main heater for heating test water to a predetermined test temperature and for maintaining the predetermined test temperature, a preheater for primarily heating the test water to the predetermined test temperature before the main heater heats the test water, and a heat exchanger including an feed pipe for feeding the test water heated by the preheater to the pressure vessel and a discharge pipe for transporting the test water discharged from the pressure vessel, in which the feed pipe is disposed inside the discharge pipe.

Device for maintaining internal temperature of pressure vessel

A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.

Charge control circuit using battery voltage tracking, and a device having the same

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Daejeon, South Korea

Sung Yong Lee