Skhynix Inc.

Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Cepla Co., Ltd.

Sung Yeon Lee

Chang Min Hong

Dae Keun Kim

Chang Won Chae

Jin Young Huh

Kyu Haeng Cho

Gwang Ho Go

Hyun Yeul Lee

Yeong-taek Lee

Ki-Hwan Kim

Jongyoon Kim

Yong Sang Yun

Chang Yong Ahn

Jin-Gil Yang

Yongjin Cho

Jong Soo Park

Hyuk Soo Kwon

Daekyu Lee

Hyun Joo Lee

Inji Jin

Moonki Yeo

Youngseok Lim

Hyeoncheon Jo

Yonghak Kim

Kanghyun Suh

Dahey Yoo

Jae Myung Rhee

Moon Young Lee

Yeung In Kim

Hee Jong Park

Poong Hyun Choi

Yunju Bae

Lai Kun Jung

Kanghyu Suh

A polyolefin thermoplastic elastomer composition for an airbag chute, includes a polypropylene, an olefin block copolymer, and a dendrimer as a material applied to a raw material of a passenger airbag chute. An olefin elastomer composite resin composition for an airbag chute includes 30-80 parts by weight of a polypropylene resin, 30-70 parts by weight of an olefin block copolymer, and 0.1-5 parts by weight of a dendrimer based on 100 parts by weight of the olefin elastomer composite resin composition. The olefin elastomer composite resin composition for an airbag chute, improves the dispersion of the elastomer by applying a high-flow elastomer and a low-flow polypropylene, and improves flowability and meltability characteristics without deteriorating physical properties by applying the dendrimer.

Olefin-based elastomer composite resin composition for airbag chute, comprising dendrimer

A non-painted thermoplastic resin composition including viscose rayon so as to embody a marble pattern and a method for making it are disclosed. The viscose rayon is included in the thermoplastic resin composition to minimize the deterioration of physical properties while minimizing weld lines and flow marks during an extrusion process, and a luxurious outer appearance of a marble pattern is embodied without additional post-processing or painting process. The non-painted thermoplastic resin composition includes 80-90 parts by weight of a thermoplastic resin composition, 0.1-5 parts by weight of a carbon fiber, and 0.1-3 parts by weight of viscose rayon based on 100 parts by weight of the entire resin composition. The viscose rayon provides an effect of minimizing weld lines and flow marks during injection, improving physical properties, and providing the luxurious appearance of the marble pattern.

Non-painted thermoplastic resin composition comprising viscose rayon and capable of embodying marble pattern and molded article thereof

The present invention is for controlling an input dimension in an electronic device, and an operation method of the electronic device includes: an operation for measuring the distance between the electronic device and the ground; and operation for transmitting, to another electronic device, first information about two-dimensional coordinates representing the position of the electronic device, when the distance is shorter than a threshold value; and an operation for transmitting, to the other electronic device, second information about three-dimensional coordinates representing the position of the electronic device, when the distance is not shorter than the threshold value.

Method for displaying object and electronic device thereof

An electronic device and a method are provided. The electronic device includes a communication module, a touch screen display, a processor electrically connected with the communication module and the touch screen display, and a memory electrically connected with the processor. The memory is configured to stores an application program configured to transmit and receive data to/from an external electronic device using the communication module, and instructions to enable the processor to display a user interface of the application program in the touch screen display when the application program is executed. The user interface includes a first area that displays at least one of an image and text that is associated with a user who is related to the external electronic device, and a second area that displays data that is shared with the external electronic device, and the first area overlaps at least a part of the second area.

Method and apparatus for supporting communication in electronic device

The nonvolatile memory device using a variable resistance material and a method for driving the same are provided. A first clamping unit connected between a resistance memory cell and a first sensing node to provide a first clamping bias to the resistance memory cell. The first clamping bias changes over time. A first compensation unit provides a compensation current to the first sensing node. A first sense amplifier is connected to the first sensing node to sense a level change of the first sensing node. In response to if first data stored in the resistance memory cell, an output value of the first sense amplifier transitions to a different state after a first amount of time from a time point from where the first clamping bias starts. In response to second data that is different from the first data stored in the resistance memory cell, the output value of the first sense amplifier transitions to the different state after a second amount of time that is different from the first amount of time from the time point from where the first clamping bias starts.

Nonvolatile memory device using variable resistance material and method for driving the same

A semiconductor memory apparatus includes a source line, a first bit line disposed over the source line, a second bit line disposed under the source line, a first memory cell between the source line and the first bit line, and a second memory cell between the source line and the second bit line.

Nonvolatile memory apparatus having magnetoresistive memory elements and method for driving the same

A semiconductor integrated circuit includes a variable resistive element, a current supply unit and a control signal generating unit. The resistance of the variable resistive element is changed depending on current flowing therethrough. The current supply unit controls the current in response to a control signal. The control signal generating unit generates the control signal by sensing the change in the resistance of the variable resistive element.

Semiconductor intergrated circuit and operating method thereof

A program pulse generation circuit includes: a set pulse generator configured to apply a set pulse to an output node in response to a driving signal, a set pulse control signal, and a first switching signal, and a current controller configured to control step reductions forming the set pulse in response to the driving signal and a second switching signal.

Programming pulse generation circuit and non-volatile memory apparatus having the same

A nonvolatile memory device comprises a memory cell configured to store or output data in a magneto-resistance device in response to a write current applied to a bit line and a source line. A voltage detector is configured to sense potentials loaded in the bit line and the source line. A write current controller configured to control activation of a write control signal in response to an output of the voltage detector, and a write driver configured to control amounts of write current applied to the memory cell according to the activation of the write control signal.

Nonvolatile memory device

A non-volatile memory device is disclosed, which performs a sensing operation using a current. The non-volatile memory device includes a cell array including one or more unit cells, configured to read or write data, a current-voltage converter configured to convert a sensing current corresponding to data stored in the unit cell into a sensing voltage, and perform a precharge operation of the sensing voltage upon receiving the sensing current in response to a current driving signal at an activation time point of a word line of the cell array, and a sense-amp configured to compare the sensing voltage with a predetermined reference voltage, and amplify the compared result.

Non-volatile memory device and sensing method thereof

A non-volatile memory device and a method for programming the same are disclosed. The method for programming the non-volatile memory device includes generating a simultaneous write current based on a program address in such a manner that bit line write cells corresponding to memory cells coupled to the same bit line from among memory cells to be programmed can be simultaneously programmed, and providing the simultaneous write current to the bit line write cells by simultaneously enabling the bit line write cells.

Non-volatile memory device and method for programming the same

A memory apparatus includes a temperature detection block configured to detect temperature of an internal circuit and output a temperature detection signal, a current control block configured to receive the temperature detection signal and generate a pulse control signal, and a write driver configured to provide a program pulse having a compensated level and width to a memory cell in response to the pulse control signal.

Memory apparatus having storage medium dependent on temperature and method for driving the same

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Seoul, South Korea

Sung Yeon Lee