Samsung Electronics Co., Ltd.

Yonsei University

Sung Yeon Kim

Jae Hong Park

Jun Ho Yoon

Yong Moon Jang

Young Soo Kim

Chang Soon Park

Hyo Sun Hwang

Jang Won Lee

Won Chul Lee

Chan Hoon Park

Je Woo Han

Hyung Jun Kim

Jin Young Park

Jong Woo Sun

Hyun Sik Jung

Jung Pyo Hong

Jeong Ahn Kwon

Da Il Eom

Kwang Nam Kim

Sang Rok Oh

A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Device for providing gas to a plasma chamber and a plasma processing device including the same

Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Method of fabricating semiconductor devices

A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

Method for fabricating semiconductor device using a hybrid mask pattern

A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period.

Reception node and transmission node for saving energy of reception node, and communication method thereof

Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node.

Hub, relay node, and node for reconfiguring active state position in wireless body area network (WBAN), and communication method thereof

Growing community of inventors

Jeongeup-si, South Korea

Sung Yeon Kim